TY - UNPB
T1 - Quantum communication networks with defects in silicon carbide
AU - Ecker, Sebastian
AU - Fink, Matthias
AU - Scheidl, Thomas
AU - Sohr, Philipp
AU - Ursin, Rupert
AU - Arshad, Muhammad Junaid
AU - Bonato, Cristian
AU - Cilibrizzi, Pasquale
AU - Gali, Adam
AU - Udvarhelyi, Péter
AU - Politi, Alberto
AU - Trojak, Oliver J.
AU - Ghezellou, Misagh
AU - Ul Hassan, Jawad
AU - Ivanov, Ivan G.
AU - Son, Nguyen Tien
AU - Burkard, Guido
AU - Tissot, Benedikt
AU - Hendriks, Joop
AU - Gilardoni, Carmem M.
AU - van der Wal, Caspar H.
AU - David, Christian
AU - Astner, Thomas
AU - Koller, Philipp
AU - Trupke, Michael
PY - 2024/3/5
Y1 - 2024/3/5
N2 - Quantum communication promises unprecedented communication capabilities enabled by the transmission of quantum states of light. However, current implementations face severe limitations in communication distance due to photon loss. Silicon carbide (SiC) defects have emerged as a promising quantum device platform, offering strong optical transitions, long spin coherence lifetimes and the opportunity for integration with semiconductor devices. Some defects with optical transitions in the telecom range have been identified, allowing to interface with fiber networks without the need for wavelength conversion. These unique properties make SiC an attractive platform for the implementation of quantum nodes for quantum communication networks. We provide an overview of the most prominent defects in SiC and their implementation in spin-photon interfaces. Furthermore, we model a memory-enhanced quantum communication protocol in order to extract the parameters required to surpass a direct point-to-point link performance. Based on these insights, we summarize the key steps required towards the deployment of SiC devices in large-scale quantum communication networks.
AB - Quantum communication promises unprecedented communication capabilities enabled by the transmission of quantum states of light. However, current implementations face severe limitations in communication distance due to photon loss. Silicon carbide (SiC) defects have emerged as a promising quantum device platform, offering strong optical transitions, long spin coherence lifetimes and the opportunity for integration with semiconductor devices. Some defects with optical transitions in the telecom range have been identified, allowing to interface with fiber networks without the need for wavelength conversion. These unique properties make SiC an attractive platform for the implementation of quantum nodes for quantum communication networks. We provide an overview of the most prominent defects in SiC and their implementation in spin-photon interfaces. Furthermore, we model a memory-enhanced quantum communication protocol in order to extract the parameters required to surpass a direct point-to-point link performance. Based on these insights, we summarize the key steps required towards the deployment of SiC devices in large-scale quantum communication networks.
UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-85188629371&partnerID=MN8TOARS
U2 - 10.48550/arXiv.2403.03284
DO - 10.48550/arXiv.2403.03284
M3 - Preprint
BT - Quantum communication networks with defects in silicon carbide
PB - arXiv
ER -