INIS
growth
100%
titanium oxides
100%
substrates
100%
investigations
100%
films
100%
titanium
100%
processing
100%
relaxation time
100%
chemical vapor deposition
100%
silicon nitrides
100%
roughness
66%
precursor
66%
grain size
66%
scanning electron microscopy
33%
microstructure
33%
concentration
33%
surfaces
33%
range
33%
volume
33%
injection
33%
deposition
33%
pulses
33%
toluene
33%
xrd
33%
afm
33%
Material Science
Silicon Nitride
100%
Film
100%
Titanium Dioxide
100%
Titanium
100%
Grain Size
66%
Scanning Electron Microscopy
33%
Surface Roughness
33%
X-Ray Diffraction
33%
Energy-Dispersive X-Ray Spectroscopy
33%
Chemical Vapor Deposition
33%
Engineering
Relaxation Time
100%
Base Pressure
100%
Processing Parameter
66%
Microstructure
33%
Growth Surface
33%
Deposited Film
33%
Nitride
33%
Titanium Dioxide (Tio2)
33%
Deposition Temperature
33%
Chemical Vapor Deposition
33%
Vapor Deposition
33%