Pulsed-pressure MOCVD processing investigation for TiO2 films on Si3N4 substrate from TTIP

V. Siriwongrungson, S. P. Krumdieck, M. M. Alkaisi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The relationship between processing parameters and microstructures of as-deposited thin titanium dioxide (TiO2) on silicon nitride (Si 3N4) substrate was investigated for pulsed-pressure metalorganic chemical vapor deposition (PP-MOCVD). Titanium tetra-isopropoxide (TTIP) dissolved in toluene was the precursor. The processing parameters investigated were a range of base pressures from 50 to 200 Pa and relaxation time of 0, 2.5, 5 and 10 sec. The deposition temperature, precursor concentration and injection volume were kept constant at 450°C, 0.015 M and 50 μl, respectively. The deposited films were analyzed using SEM, EDS, AFM, and XRD. The films have columnar growth anatase phase with the maximum growth rate of 3.0 nm/pulse. The grain sizes were between 59 and 236 nm and the maximum roughness was 5.75 nm. Growth rate and surface roughness was not affected by base pressure, but decreased with increased relaxation time. Grain size increased with base pressure and decreased with increased relaxation time.

Original languageEnglish
Title of host publicationECS Transactions
Subtitle of host publicationEuroCVD 17/CVD 17
PublisherThe Electrochemical Society
Pages987-990
Number of pages4
ISBN (Print)9781566777452
DOIs
Publication statusPublished - 2009
Event17th International Chemical Vapor Deposition Symposium (CVD-XVII) - 216th Meeting of the Electrochemical Society - Vienna, Austria
Duration: 4 Oct 20099 Oct 2009

Publication series

NameECS Transactions
Number8
Volume25
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference17th International Chemical Vapor Deposition Symposium (CVD-XVII) - 216th Meeting of the Electrochemical Society
Country/TerritoryAustria
CityVienna
Period4/10/099/10/09

ASJC Scopus subject areas

  • Engineering(all)

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