Processing of 50 nm gate-length hydrogen terminated diamond FETs for high frequency and high power applications

D. A. J. Moran, D. A. MacLaren, S. Porro, H. McLelland, P. John, J. I. B. Wilson

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

To better understand the intrinsic scaling limitations of sub-100 nm gate-length hydrogen-terminated diamond Field Effect Transistors (FETs), the fabrication and DC characterisation of 50 nm gate length devices have been investigated. Physical processing of the hydrogenated diamond surface presents a challenge for the realisation of short gate length, high performance devices due to the inherent sensitivity of the surface to device processing. Through the development of a finely optimised device fabrication process, we have demonstrated transistor operation at a reduced gate length of 50 nm. This is believed to be the shortest gate length operational diamond transistor yet reported. Inspection of device operation at larger voltages indicates the onset of potential short channel effects, attributed to the reduced dimensions of the gate. This is an important result in the investigation of the high frequency and high power potential of hydrogen terminated diamond transistors. © 2010.

Original languageEnglish
Pages (from-to)2691-2693
Number of pages3
JournalMicroelectronic Engineering
Volume88
Issue number8
DOIs
Publication statusPublished - Aug 2011

Keywords

  • 50 nm
  • Diamond
  • FET
  • Hydrogen-terminated

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