Probing Single-Charge Fluctuations at a GaAs/AlAs Interface Using Laser Spectroscopy on a Nearby InGaAs Quantum Dot

J. Houel; A. V. Kuhlmann; L. Greuter; F. Xue; M. Poggio; B. D. Gerardot; P. A. Dalgarno; A. Badolato; P. M. Petroff; A. Ludwig; D. Reuter; A. D. Wieck; R. J. Warburton

doi:10.1103/PhysRevLett.108.107401

Probing Single-Charge Fluctuations at a GaAs/AlAs Interface Using Laser Spectroscopy on a Nearby InGaAs Quantum Dot

J. Houel, A. V. Kuhlmann, L. Greuter, F. Xue, M. Poggio, B. D. Gerardot, P. A. Dalgarno, A. Badolato, P. M. Petroff, A. Ludwig, D. Reuter, A. D. Wieck, R. J. Warburton

Research output: Contribution to journal › Article › peer-review

138 Citations (Scopus)

Abstract

We probe local charge fluctuations in a semiconductor via laser spectroscopy on a nearby self-assembled quantum dot. We demonstrate that the quantum dot is sensitive to changes in the local environment at the single-charge level. By controlling the charge state of localized defects, we are able to infer the distance of the defects from the quantum dot with +/- 5 nm resolution. The results identify and quantify the main source of charge noise in the commonly used optical field-effect devices.

Original language	English
Article number	107401
Number of pages	5
Journal	Physical Review Letters
Volume	108
Issue number	10
DOIs	https://doi.org/10.1103/PhysRevLett.108.107401
Publication status	Published - 5 Mar 2012

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Houel, J., Kuhlmann, A. V., Greuter, L., Xue, F., Poggio, M., Gerardot, B. D., Dalgarno, P. A., Badolato, A., Petroff, P. M., Ludwig, A., Reuter, D., Wieck, A. D., & Warburton, R. J. (2012). Probing Single-Charge Fluctuations at a GaAs/AlAs Interface Using Laser Spectroscopy on a Nearby InGaAs Quantum Dot. Physical Review Letters, 108(10), Article 107401. https://doi.org/10.1103/PhysRevLett.108.107401

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title = "Probing Single-Charge Fluctuations at a GaAs/AlAs Interface Using Laser Spectroscopy on a Nearby InGaAs Quantum Dot",

abstract = "We probe local charge fluctuations in a semiconductor via laser spectroscopy on a nearby self-assembled quantum dot. We demonstrate that the quantum dot is sensitive to changes in the local environment at the single-charge level. By controlling the charge state of localized defects, we are able to infer the distance of the defects from the quantum dot with +/- 5 nm resolution. The results identify and quantify the main source of charge noise in the commonly used optical field-effect devices.",

author = "J. Houel and Kuhlmann, \{A. V.\} and L. Greuter and F. Xue and M. Poggio and Gerardot, \{B. D.\} and Dalgarno, \{P. A.\} and A. Badolato and Petroff, \{P. M.\} and A. Ludwig and D. Reuter and Wieck, \{A. D.\} and Warburton, \{R. J.\}",

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Houel, J, Kuhlmann, AV, Greuter, L, Xue, F, Poggio, M, Gerardot, BD , Dalgarno, PA, Badolato, A, Petroff, PM, Ludwig, A, Reuter, D, Wieck, AD & Warburton, RJ 2012, 'Probing Single-Charge Fluctuations at a GaAs/AlAs Interface Using Laser Spectroscopy on a Nearby InGaAs Quantum Dot', Physical Review Letters, vol. 108, no. 10, 107401. https://doi.org/10.1103/PhysRevLett.108.107401

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AU - Houel, J.

AU - Kuhlmann, A. V.

AU - Greuter, L.

AU - Xue, F.

AU - Poggio, M.

AU - Gerardot, B. D.

AU - Dalgarno, P. A.

AU - Badolato, A.

AU - Petroff, P. M.

AU - Ludwig, A.

AU - Reuter, D.

AU - Wieck, A. D.

AU - Warburton, R. J.

PY - 2012/3/5

Y1 - 2012/3/5

N2 - We probe local charge fluctuations in a semiconductor via laser spectroscopy on a nearby self-assembled quantum dot. We demonstrate that the quantum dot is sensitive to changes in the local environment at the single-charge level. By controlling the charge state of localized defects, we are able to infer the distance of the defects from the quantum dot with +/- 5 nm resolution. The results identify and quantify the main source of charge noise in the commonly used optical field-effect devices.

AB - We probe local charge fluctuations in a semiconductor via laser spectroscopy on a nearby self-assembled quantum dot. We demonstrate that the quantum dot is sensitive to changes in the local environment at the single-charge level. By controlling the charge state of localized defects, we are able to infer the distance of the defects from the quantum dot with +/- 5 nm resolution. The results identify and quantify the main source of charge noise in the commonly used optical field-effect devices.

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DO - 10.1103/PhysRevLett.108.107401

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VL - 108

JO - Physical Review Letters

JF - Physical Review Letters

IS - 10

M1 - 107401

ER -

Probing Single-Charge Fluctuations at a GaAs/AlAs Interface Using Laser Spectroscopy on a Nearby InGaAs Quantum Dot

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