Probing Single-Charge Fluctuations at a GaAs/AlAs Interface Using Laser Spectroscopy on a Nearby InGaAs Quantum Dot

J. Houel, A. V. Kuhlmann, L. Greuter, F. Xue, M. Poggio, B. D. Gerardot, P. A. Dalgarno, A. Badolato, P. M. Petroff, A. Ludwig, D. Reuter, A. D. Wieck, R. J. Warburton

Research output: Contribution to journalArticle

97 Citations (Scopus)

Abstract

We probe local charge fluctuations in a semiconductor via laser spectroscopy on a nearby self-assembled quantum dot. We demonstrate that the quantum dot is sensitive to changes in the local environment at the single-charge level. By controlling the charge state of localized defects, we are able to infer the distance of the defects from the quantum dot with +/- 5 nm resolution. The results identify and quantify the main source of charge noise in the commonly used optical field-effect devices.

Original languageEnglish
Article number107401
Number of pages5
JournalPhysical Review Letters
Volume108
Issue number10
DOIs
Publication statusPublished - 5 Mar 2012

Cite this

Houel, J., Kuhlmann, A. V., Greuter, L., Xue, F., Poggio, M., Gerardot, B. D., Dalgarno, P. A., Badolato, A., Petroff, P. M., Ludwig, A., Reuter, D., Wieck, A. D., & Warburton, R. J. (2012). Probing Single-Charge Fluctuations at a GaAs/AlAs Interface Using Laser Spectroscopy on a Nearby InGaAs Quantum Dot. Physical Review Letters, 108(10), [107401]. https://doi.org/10.1103/PhysRevLett.108.107401