Probing Single-Charge Fluctuations at a GaAs/AlAs Interface Using Laser Spectroscopy on a Nearby InGaAs Quantum Dot

J. Houel, A. V. Kuhlmann, L. Greuter, F. Xue, M. Poggio, B. D. Gerardot, P. A. Dalgarno, A. Badolato, P. M. Petroff, A. Ludwig, D. Reuter, A. D. Wieck, R. J. Warburton

Research output: Contribution to journalArticle

Abstract

We probe local charge fluctuations in a semiconductor via laser spectroscopy on a nearby self-assembled quantum dot. We demonstrate that the quantum dot is sensitive to changes in the local environment at the single-charge level. By controlling the charge state of localized defects, we are able to infer the distance of the defects from the quantum dot with +/- 5 nm resolution. The results identify and quantify the main source of charge noise in the commonly used optical field-effect devices.

LanguageEnglish
Article number107401
Number of pages5
JournalPhysical Review Letters
Volume108
Issue number10
DOIs
Publication statusPublished - 5 Mar 2012

Cite this

Houel, J. ; Kuhlmann, A. V. ; Greuter, L. ; Xue, F. ; Poggio, M. ; Gerardot, B. D. ; Dalgarno, P. A. ; Badolato, A. ; Petroff, P. M. ; Ludwig, A. ; Reuter, D. ; Wieck, A. D. ; Warburton, R. J. / Probing Single-Charge Fluctuations at a GaAs/AlAs Interface Using Laser Spectroscopy on a Nearby InGaAs Quantum Dot. In: Physical Review Letters. 2012 ; Vol. 108, No. 10.
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abstract = "We probe local charge fluctuations in a semiconductor via laser spectroscopy on a nearby self-assembled quantum dot. We demonstrate that the quantum dot is sensitive to changes in the local environment at the single-charge level. By controlling the charge state of localized defects, we are able to infer the distance of the defects from the quantum dot with +/- 5 nm resolution. The results identify and quantify the main source of charge noise in the commonly used optical field-effect devices.",
author = "J. Houel and Kuhlmann, {A. V.} and L. Greuter and F. Xue and M. Poggio and Gerardot, {B. D.} and Dalgarno, {P. A.} and A. Badolato and Petroff, {P. M.} and A. Ludwig and D. Reuter and Wieck, {A. D.} and Warburton, {R. J.}",
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Houel, J, Kuhlmann, AV, Greuter, L, Xue, F, Poggio, M, Gerardot, BD, Dalgarno, PA, Badolato, A, Petroff, PM, Ludwig, A, Reuter, D, Wieck, AD & Warburton, RJ 2012, 'Probing Single-Charge Fluctuations at a GaAs/AlAs Interface Using Laser Spectroscopy on a Nearby InGaAs Quantum Dot', Physical Review Letters, vol. 108, no. 10, 107401. https://doi.org/10.1103/PhysRevLett.108.107401

Probing Single-Charge Fluctuations at a GaAs/AlAs Interface Using Laser Spectroscopy on a Nearby InGaAs Quantum Dot. / Houel, J.; Kuhlmann, A. V.; Greuter, L.; Xue, F.; Poggio, M.; Gerardot, B. D.; Dalgarno, P. A.; Badolato, A.; Petroff, P. M.; Ludwig, A.; Reuter, D.; Wieck, A. D.; Warburton, R. J.

In: Physical Review Letters, Vol. 108, No. 10, 107401, 05.03.2012.

Research output: Contribution to journalArticle

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AU - Kuhlmann, A. V.

AU - Greuter, L.

AU - Xue, F.

AU - Poggio, M.

AU - Gerardot, B. D.

AU - Dalgarno, P. A.

AU - Badolato, A.

AU - Petroff, P. M.

AU - Ludwig, A.

AU - Reuter, D.

AU - Wieck, A. D.

AU - Warburton, R. J.

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AB - We probe local charge fluctuations in a semiconductor via laser spectroscopy on a nearby self-assembled quantum dot. We demonstrate that the quantum dot is sensitive to changes in the local environment at the single-charge level. By controlling the charge state of localized defects, we are able to infer the distance of the defects from the quantum dot with +/- 5 nm resolution. The results identify and quantify the main source of charge noise in the commonly used optical field-effect devices.

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DO - 10.1103/PhysRevLett.108.107401

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