Probing electrical signals in silicon CMOS devices using electric field induced second harmonic generation

Dong Xiao; Euan Ramsay; Bernd Offenbeck; Norbert Weber; Derryck T. Reid

doi:10.1117/12.645640

Probing electrical signals in silicon CMOS devices using electric field induced second harmonic generation

Dong Xiao, Euan Ramsay, Bernd Offenbeck, Norbert Weber, Derryck T. Reid

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

Abstract

We report the use of electric field induced second harmonic generation to probe electrical signals in a CMOS chip. The second harmonic of incident 2.3 µm illumination provided by a femtosecond optical parametric oscillator was measured and shown to .depend quadratically on both optical intensity and on the applied DC electric field. By using a near infrared photomultiplier tube it was possible to monitor directly the electrical waveform in the chip on the oscilloscope.

Original language	English
Article number	61080H
Journal	Proceedings of SPIE - the International Society for Optical Engineering
Volume	6108
DOIs	https://doi.org/10.1117/12.645640
Publication status	Published - 2006
Event	Commercial and Biomedical Applications of Ultrafast Lasers VI - San Jose, CA, United States Duration: 17 Jan 2006 → 19 Jan 2006

Keywords

EFISH
Flip-chip
Nonlinear imaging

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10.1117/12.645640

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AU - Offenbeck, Bernd

AU - Weber, Norbert

AU - Reid, Derryck T.

PY - 2006

Y1 - 2006

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KW - Flip-chip

KW - Nonlinear imaging

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M3 - Article

SN - 1996-756X

VL - 6108

JO - Proceedings of SPIE - the International Society for Optical Engineering

JF - Proceedings of SPIE - the International Society for Optical Engineering

M1 - 61080H

T2 - Commercial and Biomedical Applications of Ultrafast Lasers VI

Y2 - 17 January 2006 through 19 January 2006

ER -

Probing electrical signals in silicon CMOS devices using electric field induced second harmonic generation

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Keywords

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