INIS
control
100%
vacancies
100%
shape
100%
diffusion
100%
quantum wells
100%
impurities
100%
gallium arsenides
100%
annealing
50%
aluminum
50%
fluorides
50%
growth
25%
comparative evaluations
25%
energy
25%
energy gap
25%
photoluminescence
25%
activation energy
25%
Material Science
Gallium Arsenide
100%
Aluminium Gallium Arsenide
100%
Quantum Well
100%
Aluminum
50%
Diffusivity
50%
Photoluminescence
25%
Activation Energy
25%
Engineering
Gallium Arsenide
100%
Aluminium Gallium Arsenide
100%
Quantum Well
100%
Diffusion Coefficient
50%
Energy Gap
25%
Energy Shift
25%
Activation Energy
25%
Physics
Quantum Wells
100%
Diffusion Coefficient
50%
Theoretical Model
25%
Activation Energy
25%
Photoluminescence
25%