POSITION SENSITIVE DETECTORS USING HYDROGENATED AMORPHOUS SILICON.

S. K. Al Sabbagh, J. I B Wilson, W. Z. Manookian

Research output: Contribution to journalArticle

Abstract

Hydrogenated amorphous silicon (a-Si:H) offers some technical advantages over crystalline silicon for optical position sensing devices since it can be grown on a large variety of substrates at approx. 250 degree C, over large areas and at lower cost than crystalline Si. Its transparency to red light makes it suitable for applications which require superimposed detectors. We have examined a variety of layered a-Si:H structures using gold or Nichrome resistive contact layers and found that a multiple sequence of n-type/undoped/n-typed thin films offers the best positional linearity and the minimum change by the Staebler-Wronski effect.

Original languageEnglish
Pages (from-to)359-363
Number of pages5
JournalJournal of Physics D: Applied Physics
Volume21
Issue number2
Publication statusPublished - 1 Jan 1988

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