Hydrogenated amorphous silicon (a-Si:H) offers some technical advantages over crystalline silicon for optical position sensing devices since it can be grown on a large variety of substrates at approx. 250 degree C, over large areas and at lower cost than crystalline Si. Its transparency to red light makes it suitable for applications which require superimposed detectors. We have examined a variety of layered a-Si:H structures using gold or Nichrome resistive contact layers and found that a multiple sequence of n-type/undoped/n-typed thin films offers the best positional linearity and the minimum change by the Staebler-Wronski effect.
|Number of pages||5|
|Journal||Journal of Physics D: Applied Physics|
|Publication status||Published - 1 Jan 1988|