The aim of a joint research and development project at the BME and HWU is to produce a cheap, reliable, low-power and CMOS-MEMS process compatible capacitive type relative humidity (RH) sensor that can be incorporated into a state-of-the-art, wireless sensor network. In this paper we discuss the preparation of our new capacitive structure based on post-CMOS MEMS processes and the methods which were used to characterize the thin film porous alumina sensing layer. The average sensitivity is approx. 15 pF/RH% which is more than a magnitude higher than the values found in the literature. The sensor is equipped with integrated resistive heating, which can be used for maintenance to reduce drift, or for keeping the sensing layer at elevated temperature, as an alternative method for temperature-dependence cancellation. ©EDA Publishing/DTIP 2008.
|Title of host publication||DTIP of MEMS and MOEMS - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS|
|Number of pages||5|
|Publication status||Published - 2008|
|Event||DTIP of MEMS and MOEMS - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS - Nice, France|
Duration: 9 Apr 2008 → 11 Apr 2008
|Conference||DTIP of MEMS and MOEMS - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS|
|Period||9/04/08 → 11/04/08|