Porous alumina based capacitive MEMS RH sensor

László Juhász; V. V. András; T. H. Veronika; M. P Y Desmulliez; Resh S. Dhariwal

doi:10.1109/DTIP.2008.4753024

Porous alumina based capacitive MEMS RH sensor

László Juhász, V. V. András, T. H. Veronika, M. P Y Desmulliez, Resh S. Dhariwal

School of Engineering & Physical Sciences

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

15 Citations (Scopus)

Abstract

The aim of a joint research and development project at the BME and HWU is to produce a cheap, reliable, low-power and CMOS-MEMS process compatible capacitive type relative humidity (RH) sensor that can be incorporated into a state-of-the-art, wireless sensor network. In this paper we discuss the preparation of our new capacitive structure based on post-CMOS MEMS processes and the methods which were used to characterize the thin film porous alumina sensing layer. The average sensitivity is approx. 15 pF/RH% which is more than a magnitude higher than the values found in the literature. The sensor is equipped with integrated resistive heating, which can be used for maintenance to reduce drift, or for keeping the sensing layer at elevated temperature, as an alternative method for temperature-dependence cancellation. ©EDA Publishing/DTIP 2008.

Original language	English
Title of host publication	DTIP of MEMS and MOEMS - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS
Pages	381-385
Number of pages	5
DOIs	https://doi.org/10.1109/DTIP.2008.4753024
Publication status	Published - 2008
Event	DTIP of MEMS and MOEMS - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS - Nice, France Duration: 9 Apr 2008 → 11 Apr 2008

Conference

Conference	DTIP of MEMS and MOEMS - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS
Country/Territory	France
City	Nice
Period	9/04/08 → 11/04/08

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10.1109/DTIP.2008.4753024

Cite this

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title = "Porous alumina based capacitive MEMS RH sensor",

abstract = "The aim of a joint research and development project at the BME and HWU is to produce a cheap, reliable, low-power and CMOS-MEMS process compatible capacitive type relative humidity (RH) sensor that can be incorporated into a state-of-the-art, wireless sensor network. In this paper we discuss the preparation of our new capacitive structure based on post-CMOS MEMS processes and the methods which were used to characterize the thin film porous alumina sensing layer. The average sensitivity is approx. 15 pF/RH% which is more than a magnitude higher than the values found in the literature. The sensor is equipped with integrated resistive heating, which can be used for maintenance to reduce drift, or for keeping the sensing layer at elevated temperature, as an alternative method for temperature-dependence cancellation. {\textcopyright}EDA Publishing/DTIP 2008.",

author = "L{\'a}szl{\'o} Juh{\'a}sz and Andr{\'a}s, {V. V.} and Veronika, {T. H.} and Desmulliez, {M. P Y} and Dhariwal, {Resh S.}",

year = "2008",

doi = "10.1109/DTIP.2008.4753024",

language = "English",

isbn = "9782355000065",

pages = "381--385",

booktitle = "DTIP of MEMS and MOEMS - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS",

note = "DTIP of MEMS and MOEMS - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS ; Conference date: 09-04-2008 Through 11-04-2008",

}

Juhász, L, András, VV, Veronika, TH, Desmulliez, MPY & Dhariwal, RS 2008, Porous alumina based capacitive MEMS RH sensor. in DTIP of MEMS and MOEMS - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS. pp. 381-385, DTIP of MEMS and MOEMS - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, Nice, France, 9/04/08. https://doi.org/10.1109/DTIP.2008.4753024

TY - GEN

T1 - Porous alumina based capacitive MEMS RH sensor

AU - Juhász, László

AU - András, V. V.

AU - Veronika, T. H.

AU - Desmulliez, M. P Y

AU - Dhariwal, Resh S.

PY - 2008

Y1 - 2008

N2 - The aim of a joint research and development project at the BME and HWU is to produce a cheap, reliable, low-power and CMOS-MEMS process compatible capacitive type relative humidity (RH) sensor that can be incorporated into a state-of-the-art, wireless sensor network. In this paper we discuss the preparation of our new capacitive structure based on post-CMOS MEMS processes and the methods which were used to characterize the thin film porous alumina sensing layer. The average sensitivity is approx. 15 pF/RH% which is more than a magnitude higher than the values found in the literature. The sensor is equipped with integrated resistive heating, which can be used for maintenance to reduce drift, or for keeping the sensing layer at elevated temperature, as an alternative method for temperature-dependence cancellation. ©EDA Publishing/DTIP 2008.

AB - The aim of a joint research and development project at the BME and HWU is to produce a cheap, reliable, low-power and CMOS-MEMS process compatible capacitive type relative humidity (RH) sensor that can be incorporated into a state-of-the-art, wireless sensor network. In this paper we discuss the preparation of our new capacitive structure based on post-CMOS MEMS processes and the methods which were used to characterize the thin film porous alumina sensing layer. The average sensitivity is approx. 15 pF/RH% which is more than a magnitude higher than the values found in the literature. The sensor is equipped with integrated resistive heating, which can be used for maintenance to reduce drift, or for keeping the sensing layer at elevated temperature, as an alternative method for temperature-dependence cancellation. ©EDA Publishing/DTIP 2008.

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U2 - 10.1109/DTIP.2008.4753024

DO - 10.1109/DTIP.2008.4753024

M3 - Conference contribution

SN - 9782355000065

SP - 381

EP - 385

BT - DTIP of MEMS and MOEMS - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS

T2 - DTIP of MEMS and MOEMS - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS

Y2 - 9 April 2008 through 11 April 2008

ER -

Porous alumina based capacitive MEMS RH sensor

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