Porous alumina based capacitive MEMS RH sensor

László Juhász, V. V. András, T. H. Veronika, M. P Y Desmulliez, Resh S. Dhariwal

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The aim of a joint research and development project at the BME and HWU is to produce a cheap, reliable, low-power and CMOS-MEMS process compatible capacitive type relative humidity (RH) sensor that can be incorporated into a state-of-the-art, wireless sensor network. In this paper we discuss the preparation of our new capacitive structure based on post-CMOS MEMS processes and the methods which were used to characterize the thin film porous alumina sensing layer. The average sensitivity is approx. 15 pF/RH% which is more than a magnitude higher than the values found in the literature. The sensor is equipped with integrated resistive heating, which can be used for maintenance to reduce drift, or for keeping the sensing layer at elevated temperature, as an alternative method for temperature-dependence cancellation. ©EDA Publishing/DTIP 2008.

Original languageEnglish
Title of host publicationDTIP of MEMS and MOEMS - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS
Pages381-385
Number of pages5
DOIs
Publication statusPublished - 2008
EventDTIP of MEMS and MOEMS - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS - Nice, France
Duration: 9 Apr 200811 Apr 2008

Conference

ConferenceDTIP of MEMS and MOEMS - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS
CountryFrance
CityNice
Period9/04/0811/04/08

Fingerprint

Humidity sensors
MEMS
Atmospheric humidity
Alumina
Wireless sensor networks
Heating
Thin films
Temperature
Sensors

Cite this

Juhász, L., András, V. V., Veronika, T. H., Desmulliez, M. P. Y., & Dhariwal, R. S. (2008). Porous alumina based capacitive MEMS RH sensor. In DTIP of MEMS and MOEMS - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (pp. 381-385) https://doi.org/10.1109/DTIP.2008.4753024
Juhász, László ; András, V. V. ; Veronika, T. H. ; Desmulliez, M. P Y ; Dhariwal, Resh S. / Porous alumina based capacitive MEMS RH sensor. DTIP of MEMS and MOEMS - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS. 2008. pp. 381-385
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abstract = "The aim of a joint research and development project at the BME and HWU is to produce a cheap, reliable, low-power and CMOS-MEMS process compatible capacitive type relative humidity (RH) sensor that can be incorporated into a state-of-the-art, wireless sensor network. In this paper we discuss the preparation of our new capacitive structure based on post-CMOS MEMS processes and the methods which were used to characterize the thin film porous alumina sensing layer. The average sensitivity is approx. 15 pF/RH{\%} which is more than a magnitude higher than the values found in the literature. The sensor is equipped with integrated resistive heating, which can be used for maintenance to reduce drift, or for keeping the sensing layer at elevated temperature, as an alternative method for temperature-dependence cancellation. {\circledC}EDA Publishing/DTIP 2008.",
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Juhász, L, András, VV, Veronika, TH, Desmulliez, MPY & Dhariwal, RS 2008, Porous alumina based capacitive MEMS RH sensor. in DTIP of MEMS and MOEMS - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS. pp. 381-385, DTIP of MEMS and MOEMS - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, Nice, France, 9/04/08. https://doi.org/10.1109/DTIP.2008.4753024

Porous alumina based capacitive MEMS RH sensor. / Juhász, László; András, V. V.; Veronika, T. H.; Desmulliez, M. P Y; Dhariwal, Resh S.

DTIP of MEMS and MOEMS - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS. 2008. p. 381-385.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Juhász L, András VV, Veronika TH, Desmulliez MPY, Dhariwal RS. Porous alumina based capacitive MEMS RH sensor. In DTIP of MEMS and MOEMS - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS. 2008. p. 381-385 https://doi.org/10.1109/DTIP.2008.4753024