Poly(p‐phenylenevinylene) light‐emitting diodes: Enhanced electroluminescent efficiency through charge carrier confinement

A R BROWN, D D C BRADLEY, J H BURROUGHES, R H FRIEND, N C GREENHAM, P L BURN, A B HOLMES, A KRAFT

Research output: Contribution to journalArticle

Abstract

We have fabricated light-emitting diodes with poly(p-phenylenevinylene) as the emissive layer, and with an electron-transporting layer formed from a solid state dispersion of 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole in poly(methyl methacrylate), placed between this and the negative electrode. These structures show typically a tenfold improvement in efficiency in the low-voltage regime and an eightfold improvement in the high-voltage regime over devices without the electron-transporting layer. Typical efficiencies are about 0.8% photons/electron. We consider that the role of the electron-transport layer is to confine holes to the emissive layer.

Original languageEnglish
Pages (from-to)2793-2795
Number of pages3
JournalApplied Physics Letters
Volume61
Issue number23
DOIs
Publication statusPublished - 7 Dec 1992

Cite this

BROWN, A. R., BRADLEY, D. D. C., BURROUGHES, J. H., FRIEND, R. H., GREENHAM, N. C., BURN, P. L., HOLMES, A. B., & KRAFT, A. (1992). Poly(p‐phenylenevinylene) light‐emitting diodes: Enhanced electroluminescent efficiency through charge carrier confinement. Applied Physics Letters, 61(23), 2793-2795. https://doi.org/10.1063/1.108094