Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire

Dmytro Kundys, S. Schulz, F. Oehler, D. Sutherland, T. J. Badcock, P. Dawson, M. J. Kappers, R. A. Oliver, C. J. Humphreys

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Abstract

We have performed a detailed study of the impact of basal plane stacking faults (BSFs) on the optical properties of both a-plane InGaN/GaN quantum wells (QWs) and GaN template samples grown on r-sapphire. In particular, we have used polarised photoluminescence excitation spectroscopy (P-PLE) to investigate the nature of the low temperature recombination as well as extracting information on the valence band (VB) polarisation anisotropy. Our low temperature P-PLE results revealed not only excitons associated with intersubband quantum well transitions and the GaN barrier material but also a transition associated with creation of excitons in BSFs. The strength of this BSF transition varied with detection energy across the quantum well emission suggesting that there is a significant contribution to the emission line width from changes in the local electronic environment of the QWs due to interactions with BSFs. Furthermore, we observed a corresponding progressive increase in the VB splitting of the QWs as the detection energy was varied across the quantum well emission spectrum.

Original languageEnglish
Article number113106
JournalJournal of Applied Physics
Volume115
Issue number11
DOIs
Publication statusPublished - 21 Mar 2014

Keywords

  • STACKING-FAULTS
  • GAN

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