Polarization-state beating in ZnSe epilayers and ZnSe/Zn(Cd,Se) multiple quantum wells

  • A. Tookey
  • , D. J. Bain
  • , I. J. Blewett
  • , I. Galbraith
  • , A. K. Kar
  • , B. S. Wherrett
  • , T. A. Steele
  • , G. Horsburgh
  • , K. A. Prior
  • , B. C. Cavenett

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Results are presented for molecular beam epitaxy (MBE)-based ZnSe epilayers and ZnSe/Zn(Cd,Se) multiple quantum wells polarization-state beating. The polarization of the time-integrated four-wave-mixing (TI-FWM) signal was investigated as a function of the relative time delay between the incident pulses. A perturbation approach for the density operator was used to develop an empirical model of the semiconductor to explain the third-order quantum beating of the exciton and biexciton polarizations in quantum-well material.

Original languageEnglish
Title of host publicationQuantum Electronics and Laser Science Conference, 1997. QELS '97., Summaries of Papers Presented at the
Pages2-3
Number of pages2
Volume12
Publication statusPublished - 1997
Event1997 Conference on Quantum Electronics and Laser Science - Baltimore, MD, United States
Duration: 18 May 199723 May 1997

Conference

Conference1997 Conference on Quantum Electronics and Laser Science
Abbreviated titleQELS 1997
Country/TerritoryUnited States
CityBaltimore, MD
Period18/05/9723/05/97

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