Polarization-state beating in ZnSe epilayers and ZnSe/Zn(Cd,Se) multiple quantum wells

A. Tookey, D. J. Bain, I. J. Blewett, I. Galbraith, A. K. Kar, B. S. Wherrett, T. A. Steele, G. Horsburgh, K. A. Prior, B. C. Cavenett

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Results are presented for molecular beam epitaxy (MBE)-based ZnSe epilayers and ZnSe/Zn(Cd,Se) multiple quantum wells polarization-state beating. The polarization of the time-integrated four-wave-mixing (TI-FWM) signal was investigated as a function of the relative time delay between the incident pulses. A perturbation approach for the density operator was used to develop an empirical model of the semiconductor to explain the third-order quantum beating of the exciton and biexciton polarizations in quantum-well material.

Original languageEnglish
Title of host publicationQuantum Electronics and Laser Science Conference, 1997. QELS '97., Summaries of Papers Presented at the
Pages2-3
Number of pages2
Volume12
Publication statusPublished - 1997
Event1997 Conference on Quantum Electronics and Laser Science - Baltimore, MD, United States
Duration: 18 May 199723 May 1997

Conference

Conference1997 Conference on Quantum Electronics and Laser Science
Abbreviated titleQELS 1997
CountryUnited States
CityBaltimore, MD
Period18/05/9723/05/97

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    Tookey, A., Bain, D. J., Blewett, I. J., Galbraith, I., Kar, A. K., Wherrett, B. S., Steele, T. A., Horsburgh, G., Prior, K. A., & Cavenett, B. C. (1997). Polarization-state beating in ZnSe epilayers and ZnSe/Zn(Cd,Se) multiple quantum wells. In Quantum Electronics and Laser Science Conference, 1997. QELS '97., Summaries of Papers Presented at the (Vol. 12, pp. 2-3)