Polarization-state beating in ZnSe epilayers and ZnSe/Zn(Cd,Se) multiple quantum wells

A. Tookey; D. J. Bain; I. J. Blewett; I. Galbraith; A. K. Kar; B. S. Wherrett; T. A. Steele; G. Horsburgh; K. A. Prior; B. C. Cavenett

Polarization-state beating in ZnSe epilayers and ZnSe/Zn(Cd,Se) multiple quantum wells

A. Tookey, D. J. Bain, I. J. Blewett, I. Galbraith, A. K. Kar, B. S. Wherrett, T. A. Steele, G. Horsburgh, K. A. Prior, B. C. Cavenett

School of Engineering & Physical Sciences

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

Results are presented for molecular beam epitaxy (MBE)-based ZnSe epilayers and ZnSe/Zn(Cd,Se) multiple quantum wells polarization-state beating. The polarization of the time-integrated four-wave-mixing (TI-FWM) signal was investigated as a function of the relative time delay between the incident pulses. A perturbation approach for the density operator was used to develop an empirical model of the semiconductor to explain the third-order quantum beating of the exciton and biexciton polarizations in quantum-well material.

Original language	English
Title of host publication	Quantum Electronics and Laser Science Conference, 1997. QELS '97., Summaries of Papers Presented at the
Pages	2-3
Number of pages	2
Volume	12
Publication status	Published - 1997
Event	1997 Conference on Quantum Electronics and Laser Science - Baltimore, MD, United States Duration: 18 May 1997 → 23 May 1997

Conference

Conference	1997 Conference on Quantum Electronics and Laser Science
Abbreviated title	QELS 1997
Country/Territory	United States
City	Baltimore, MD
Period	18/05/97 → 23/05/97

Cite this

@inbook{fa5c7ac3c74d4224903ad309b26a8068,

title = "Polarization-state beating in ZnSe epilayers and ZnSe/Zn(Cd,Se) multiple quantum wells",

abstract = "Results are presented for molecular beam epitaxy (MBE)-based ZnSe epilayers and ZnSe/Zn(Cd,Se) multiple quantum wells polarization-state beating. The polarization of the time-integrated four-wave-mixing (TI-FWM) signal was investigated as a function of the relative time delay between the incident pulses. A perturbation approach for the density operator was used to develop an empirical model of the semiconductor to explain the third-order quantum beating of the exciton and biexciton polarizations in quantum-well material.",

author = "A. Tookey and Bain, {D. J.} and Blewett, {I. J.} and I. Galbraith and Kar, {A. K.} and Wherrett, {B. S.} and Steele, {T. A.} and G. Horsburgh and Prior, {K. A.} and Cavenett, {B. C.}",

year = "1997",

language = "English",

isbn = "1-55752-501-3",

volume = "12",

pages = "2--3",

booktitle = "Quantum Electronics and Laser Science Conference, 1997. QELS '97., Summaries of Papers Presented at the",

note = "1997 Conference on Quantum Electronics and Laser Science, QELS 1997 ; Conference date: 18-05-1997 Through 23-05-1997",

}

Tookey, A, Bain, DJ, Blewett, IJ, Galbraith, I, Kar, AK, Wherrett, BS, Steele, TA, Horsburgh, G, Prior, KA & Cavenett, BC 1997, Polarization-state beating in ZnSe epilayers and ZnSe/Zn(Cd,Se) multiple quantum wells. in Quantum Electronics and Laser Science Conference, 1997. QELS '97., Summaries of Papers Presented at the. vol. 12, pp. 2-3, 1997 Conference on Quantum Electronics and Laser Science, Baltimore, MD, United States, 18/05/97.

TY - CHAP

T1 - Polarization-state beating in ZnSe epilayers and ZnSe/Zn(Cd,Se) multiple quantum wells

AU - Tookey, A.

AU - Bain, D. J.

AU - Blewett, I. J.

AU - Galbraith, I.

AU - Kar, A. K.

AU - Wherrett, B. S.

AU - Steele, T. A.

AU - Horsburgh, G.

AU - Prior, K. A.

AU - Cavenett, B. C.

PY - 1997

Y1 - 1997

N2 - Results are presented for molecular beam epitaxy (MBE)-based ZnSe epilayers and ZnSe/Zn(Cd,Se) multiple quantum wells polarization-state beating. The polarization of the time-integrated four-wave-mixing (TI-FWM) signal was investigated as a function of the relative time delay between the incident pulses. A perturbation approach for the density operator was used to develop an empirical model of the semiconductor to explain the third-order quantum beating of the exciton and biexciton polarizations in quantum-well material.

AB - Results are presented for molecular beam epitaxy (MBE)-based ZnSe epilayers and ZnSe/Zn(Cd,Se) multiple quantum wells polarization-state beating. The polarization of the time-integrated four-wave-mixing (TI-FWM) signal was investigated as a function of the relative time delay between the incident pulses. A perturbation approach for the density operator was used to develop an empirical model of the semiconductor to explain the third-order quantum beating of the exciton and biexciton polarizations in quantum-well material.

UR - http://www.scopus.com/inward/record.url?scp=0030719090&partnerID=8YFLogxK

M3 - Chapter

SN - 1-55752-501-3

VL - 12

SP - 2

EP - 3

BT - Quantum Electronics and Laser Science Conference, 1997. QELS '97., Summaries of Papers Presented at the

T2 - 1997 Conference on Quantum Electronics and Laser Science

Y2 - 18 May 1997 through 23 May 1997

ER -

Polarization-state beating in ZnSe epilayers and ZnSe/Zn(Cd,Se) multiple quantum wells

Abstract

Conference

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