Polarization-modulated magnetoreflection in magnetic semiconductors: CdCr2S4 and EuSe

C. R. Pidegeon, R. B. Denni, J. S. Webb

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5 Citations (Scopus)


The polarization-modulated (PM) magnetoreflection technique has been used to study magnetic ordering effects in CdCr2S4 and EuSe. The energy gap for direct band-band transitions in CdCr2S4 has been measured to be EG = 2.3 eV, and the exchange splitting of the valence band to be about 0.03 eV. Good agreement with thin film absorption measurements is obtained in the temperature dependence of spectral structure, observed at energies less than EG, associated with crystal field and charge transfer transitions. No strongly blue-shifting peak is observed with magnetic order. PM magnetoreflection spectra of the E1 peak of EuSe show a direct manifestation of the spin alignment from the ferrimagnetic to ferromagnetic state of this crystal at 2 K in external fields up to 16 kOe. An attempt is made to explain resonant Raman scattering in EuSe (observed by other workers) in terms of the field-induced shift of one of the polarized E1 reflectivity components into coincidence with the 5145 Å argon-ion laser line. © 1973.

Original languageEnglish
Pages (from-to)340-346
Number of pages7
JournalSurface Science
Issue numberC
Publication statusPublished - Jun 1973


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