Polarity-dependent memory switching effects in the Ti/CdxPb1-xS/Ag system

Hari Upadhyaya, S Chandra

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8 Citations (Scopus)

Abstract

Polarity-dependent memory switching has been observed in the system Ti\CdxPb1-xS\Ag for x = 0.575 to 0.895. The material CdxPb1-xS prepared by a chemical bath deposition technique, possessed excess Cd and Pb clusters. A polyfilamentary model based on whisker growth due to the aggregation of Cd, Pb and Ag (arising from the electrode interface) has been suggested to explain the memory switching characteristics in our system. The 'growth' of filamentary whiskers followed by their 'rupture' at higher injection currents due to Joule heating is assumed to give rise to the switching action.

Original languageEnglish
Pages (from-to)332-338
Number of pages7
JournalSemiconductor Science and Technology
Volume10
Issue number3
DOIs
Publication statusPublished - Mar 1995

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