Polarity-dependent memory switching effects in the Ti/CdxPb1-xS/Ag system

Hari Upadhyaya; S Chandra

doi:10.1088/0268-1242/10/3/016

Polarity-dependent memory switching effects in the Ti/Cd_xPb_1-xS/Ag system

Hari Upadhyaya, S Chandra

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Abstract

Polarity-dependent memory switching has been observed in the system Ti\CdxPb1-xS\Ag for x = 0.575 to 0.895. The material CdxPb1-xS prepared by a chemical bath deposition technique, possessed excess Cd and Pb clusters. A polyfilamentary model based on whisker growth due to the aggregation of Cd, Pb and Ag (arising from the electrode interface) has been suggested to explain the memory switching characteristics in our system. The 'growth' of filamentary whiskers followed by their 'rupture' at higher injection currents due to Joule heating is assumed to give rise to the switching action.

Original language	English
Pages (from-to)	332-338
Number of pages	7
Journal	Semiconductor Science and Technology
Volume	10
Issue number	3
DOIs	https://doi.org/10.1088/0268-1242/10/3/016
Publication status	Published - Mar 1995

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title = "Polarity-dependent memory switching effects in the Ti/CdxPb1-xS/Ag system",

abstract = "Polarity-dependent memory switching has been observed in the system Ti\CdxPb1-xS\Ag for x = 0.575 to 0.895. The material CdxPb1-xS prepared by a chemical bath deposition technique, possessed excess Cd and Pb clusters. A polyfilamentary model based on whisker growth due to the aggregation of Cd, Pb and Ag (arising from the electrode interface) has been suggested to explain the memory switching characteristics in our system. The 'growth' of filamentary whiskers followed by their 'rupture' at higher injection currents due to Joule heating is assumed to give rise to the switching action.",

author = "Hari Upadhyaya and S Chandra",

year = "1995",

month = mar,

doi = "10.1088/0268-1242/10/3/016",

language = "English",

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pages = "332--338",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

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TY - JOUR

T1 - Polarity-dependent memory switching effects in the Ti/CdxPb1-xS/Ag system

AU - Upadhyaya, Hari

AU - Chandra, S

PY - 1995/3

Y1 - 1995/3

N2 - Polarity-dependent memory switching has been observed in the system Ti\CdxPb1-xS\Ag for x = 0.575 to 0.895. The material CdxPb1-xS prepared by a chemical bath deposition technique, possessed excess Cd and Pb clusters. A polyfilamentary model based on whisker growth due to the aggregation of Cd, Pb and Ag (arising from the electrode interface) has been suggested to explain the memory switching characteristics in our system. The 'growth' of filamentary whiskers followed by their 'rupture' at higher injection currents due to Joule heating is assumed to give rise to the switching action.

AB - Polarity-dependent memory switching has been observed in the system Ti\CdxPb1-xS\Ag for x = 0.575 to 0.895. The material CdxPb1-xS prepared by a chemical bath deposition technique, possessed excess Cd and Pb clusters. A polyfilamentary model based on whisker growth due to the aggregation of Cd, Pb and Ag (arising from the electrode interface) has been suggested to explain the memory switching characteristics in our system. The 'growth' of filamentary whiskers followed by their 'rupture' at higher injection currents due to Joule heating is assumed to give rise to the switching action.

U2 - 10.1088/0268-1242/10/3/016

DO - 10.1088/0268-1242/10/3/016

M3 - Article

SN - 0268-1242

VL - 10

SP - 332

EP - 338

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 3

ER -

Polarity-dependent memory switching effects in the Ti/CdxPb1-xS/Ag system

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Polarity-dependent memory switching effects in the Ti/Cd_xPb_1-xS/Ag system