Plasmonic modulator using CMOS-compatible material platform

Viktoriia E. Babicheva, Nathaniel Kinsey, Gururaj V. Naik, Marcello Ferrera, Andrei V. Lavrinenko, Vladimir M. Shalaev, Alexandra Boltasseva

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, a design of ultra-compact plasmonic modulator is proposed and numerically analyzed. The device layout utilizes alternative plasmonic materials such as transparent conducting oxides and titanium nitride which potentially can be applied for CMOS compatible process. The modulation is obtained by varying the carrier concentration of the transparent conducting oxide layer and exciting plasmonic resonance in the structure. The analysis shows that an extinction ratio of 46 dB/μm can be achieved at the telecommunication wavelength. Proposed structure is particularly convenient for integration with existing insulator-metal-insulator plasmonic waveguides as well as novel photonic/electronic hybrid circuits.

Original languageEnglish
Title of host publication2014 8th International Congress on Advanced Electromagnetic Materials in Microwaves and Optics, METAMATERIALS 2014
PublisherIEEE
Pages28-30
Number of pages3
ISBN (Print)9781479934522
DOIs
Publication statusPublished - 1 Jan 2014
Event8th International Congress on Advanced Electromagnetic Materials in Microwaves and Optics 2014 - Copenhagen, United Kingdom
Duration: 25 Aug 201428 Aug 2014

Conference

Conference8th International Congress on Advanced Electromagnetic Materials in Microwaves and Optics 2014
Abbreviated titleMETAMATERIALS 2014
CountryUnited Kingdom
CityCopenhagen
Period25/08/1428/08/14

Fingerprint

Photonics
Oxides
Modulators
Telecommunication
Carrier concentration
modulators
CMOS
Waveguides
platforms
Metals
Modulation
insulators
hybrid circuits
conduction
Wavelength
Titanium nitride
oxides
Networks (circuits)
titanium nitrides
layouts

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Babicheva, V. E., Kinsey, N., Naik, G. V., Ferrera, M., Lavrinenko, A. V., Shalaev, V. M., & Boltasseva, A. (2014). Plasmonic modulator using CMOS-compatible material platform. In 2014 8th International Congress on Advanced Electromagnetic Materials in Microwaves and Optics, METAMATERIALS 2014 (pp. 28-30). [6948536] IEEE. https://doi.org/10.1109/MetaMaterials.2014.6948536
Babicheva, Viktoriia E. ; Kinsey, Nathaniel ; Naik, Gururaj V. ; Ferrera, Marcello ; Lavrinenko, Andrei V. ; Shalaev, Vladimir M. ; Boltasseva, Alexandra. / Plasmonic modulator using CMOS-compatible material platform. 2014 8th International Congress on Advanced Electromagnetic Materials in Microwaves and Optics, METAMATERIALS 2014. IEEE, 2014. pp. 28-30
@inproceedings{8d1fb66323bf49749b499f5b19a22da0,
title = "Plasmonic modulator using CMOS-compatible material platform",
abstract = "In this work, a design of ultra-compact plasmonic modulator is proposed and numerically analyzed. The device layout utilizes alternative plasmonic materials such as transparent conducting oxides and titanium nitride which potentially can be applied for CMOS compatible process. The modulation is obtained by varying the carrier concentration of the transparent conducting oxide layer and exciting plasmonic resonance in the structure. The analysis shows that an extinction ratio of 46 dB/μm can be achieved at the telecommunication wavelength. Proposed structure is particularly convenient for integration with existing insulator-metal-insulator plasmonic waveguides as well as novel photonic/electronic hybrid circuits.",
author = "Babicheva, {Viktoriia E.} and Nathaniel Kinsey and Naik, {Gururaj V.} and Marcello Ferrera and Lavrinenko, {Andrei V.} and Shalaev, {Vladimir M.} and Alexandra Boltasseva",
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day = "1",
doi = "10.1109/MetaMaterials.2014.6948536",
language = "English",
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Babicheva, VE, Kinsey, N, Naik, GV, Ferrera, M, Lavrinenko, AV, Shalaev, VM & Boltasseva, A 2014, Plasmonic modulator using CMOS-compatible material platform. in 2014 8th International Congress on Advanced Electromagnetic Materials in Microwaves and Optics, METAMATERIALS 2014., 6948536, IEEE, pp. 28-30, 8th International Congress on Advanced Electromagnetic Materials in Microwaves and Optics 2014, Copenhagen, United Kingdom, 25/08/14. https://doi.org/10.1109/MetaMaterials.2014.6948536

Plasmonic modulator using CMOS-compatible material platform. / Babicheva, Viktoriia E.; Kinsey, Nathaniel; Naik, Gururaj V.; Ferrera, Marcello; Lavrinenko, Andrei V.; Shalaev, Vladimir M.; Boltasseva, Alexandra.

2014 8th International Congress on Advanced Electromagnetic Materials in Microwaves and Optics, METAMATERIALS 2014. IEEE, 2014. p. 28-30 6948536.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Plasmonic modulator using CMOS-compatible material platform

AU - Babicheva, Viktoriia E.

AU - Kinsey, Nathaniel

AU - Naik, Gururaj V.

AU - Ferrera, Marcello

AU - Lavrinenko, Andrei V.

AU - Shalaev, Vladimir M.

AU - Boltasseva, Alexandra

PY - 2014/1/1

Y1 - 2014/1/1

N2 - In this work, a design of ultra-compact plasmonic modulator is proposed and numerically analyzed. The device layout utilizes alternative plasmonic materials such as transparent conducting oxides and titanium nitride which potentially can be applied for CMOS compatible process. The modulation is obtained by varying the carrier concentration of the transparent conducting oxide layer and exciting plasmonic resonance in the structure. The analysis shows that an extinction ratio of 46 dB/μm can be achieved at the telecommunication wavelength. Proposed structure is particularly convenient for integration with existing insulator-metal-insulator plasmonic waveguides as well as novel photonic/electronic hybrid circuits.

AB - In this work, a design of ultra-compact plasmonic modulator is proposed and numerically analyzed. The device layout utilizes alternative plasmonic materials such as transparent conducting oxides and titanium nitride which potentially can be applied for CMOS compatible process. The modulation is obtained by varying the carrier concentration of the transparent conducting oxide layer and exciting plasmonic resonance in the structure. The analysis shows that an extinction ratio of 46 dB/μm can be achieved at the telecommunication wavelength. Proposed structure is particularly convenient for integration with existing insulator-metal-insulator plasmonic waveguides as well as novel photonic/electronic hybrid circuits.

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DO - 10.1109/MetaMaterials.2014.6948536

M3 - Conference contribution

SN - 9781479934522

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BT - 2014 8th International Congress on Advanced Electromagnetic Materials in Microwaves and Optics, METAMATERIALS 2014

PB - IEEE

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Babicheva VE, Kinsey N, Naik GV, Ferrera M, Lavrinenko AV, Shalaev VM et al. Plasmonic modulator using CMOS-compatible material platform. In 2014 8th International Congress on Advanced Electromagnetic Materials in Microwaves and Optics, METAMATERIALS 2014. IEEE. 2014. p. 28-30. 6948536 https://doi.org/10.1109/MetaMaterials.2014.6948536