Planar CBRAM devices using non-cleanroom techniques as RF switches

This research article presents a novel technique to fabricate planar micro gap (< 1–2 µm) CBRAM RF devices using laser-based PCB lithography, electroplating and spin coating techniques. Nafion, an ion conductor is subsequently filled between the electroplated copper and nickel active and inert electrodes, respectively. On optimization of the programming waveform for set/reset operations, low resistance state (LRS) upto 2 Ω is achievable, hence making them applicable as RF switches. The devices showed good reliability with endurance cycles higher than 500, high OFF/ON resistance > 10 ⁶, high maximum isolation (− 60 dB), low insertion loss (− 0.2 dB) and a figure of merit of 2.65 THz. Finally, images with optical microscope are presented which give evidence to the switching phenomena in these micro-gap devices. To conclude, this non-clean room approach, as it simplifies the fabrication process, lowers the cost and energy of production and is a potential candidate for sustainable development for RF switches and devices.