TY - JOUR
T1 - Planar CBRAM devices using non-cleanroom techniques as RF switches
AU - Mahato, Prabir
AU - Methapettyparambu Purushothama, Jayakrishnan
AU - Vena, Arnaud
AU - Perret, Etienne
N1 - Funding Information:
This work was supported by the European Research Council (ERC) through the European Union’s Horizon 2020 Research and Innovation Program, ScattererID Project, under Grant 772539. https://www.scattererid.eu/ .
Publisher Copyright:
© 2023, The Author(s), under exclusive licence to Springer-Verlag GmbH, DE part of Springer Nature.
PY - 2023/5/20
Y1 - 2023/5/20
N2 - This research article presents a novel technique to fabricate planar micro gap (< 1–2 µm) CBRAM RF devices using laser-based PCB lithography, electroplating and spin coating techniques. Nafion, an ion conductor is subsequently filled between the electroplated copper and nickel active and inert electrodes, respectively. On optimization of the programming waveform for set/reset operations, low resistance state (LRS) upto 2 Ω is achievable, hence making them applicable as RF switches. The devices showed good reliability with endurance cycles higher than 500, high OFF/ON resistance > 10
6, high maximum isolation (− 60 dB), low insertion loss (− 0.2 dB) and a figure of merit of 2.65 THz. Finally, images with optical microscope are presented which give evidence to the switching phenomena in these micro-gap devices. To conclude, this non-clean room approach, as it simplifies the fabrication process, lowers the cost and energy of production and is a potential candidate for sustainable development for RF switches and devices.
AB - This research article presents a novel technique to fabricate planar micro gap (< 1–2 µm) CBRAM RF devices using laser-based PCB lithography, electroplating and spin coating techniques. Nafion, an ion conductor is subsequently filled between the electroplated copper and nickel active and inert electrodes, respectively. On optimization of the programming waveform for set/reset operations, low resistance state (LRS) upto 2 Ω is achievable, hence making them applicable as RF switches. The devices showed good reliability with endurance cycles higher than 500, high OFF/ON resistance > 10
6, high maximum isolation (− 60 dB), low insertion loss (− 0.2 dB) and a figure of merit of 2.65 THz. Finally, images with optical microscope are presented which give evidence to the switching phenomena in these micro-gap devices. To conclude, this non-clean room approach, as it simplifies the fabrication process, lowers the cost and energy of production and is a potential candidate for sustainable development for RF switches and devices.
KW - CBRAMs
KW - Memristor
KW - Non-cleanroom techniques
KW - RF switches
UR - http://www.scopus.com/inward/record.url?scp=85160010103&partnerID=8YFLogxK
U2 - 10.1007/s00339-023-06687-x
DO - 10.1007/s00339-023-06687-x
M3 - Article
SN - 0947-8396
VL - 129
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
IS - 6
M1 - 438
ER -