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Planar and transverse electrical conductivity of doped a-Si: H
J. I B Wilson
, S. K. Al-Sabbagh
, W. Z. Manookian
School of Engineering & Physical Sciences
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peer-review
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INIS
bending
16%
configuration
16%
doped materials
100%
electrical conductivity
100%
films
100%
hydrogenation
16%
origin
16%
phosphorus
16%
silicon
16%
surfaces
16%
values
16%
voltage
16%
Material Science
Amorphous Silicon
25%
Current Voltage Characteristics
25%
Doping (Additives)
25%
Electrical Conductivity
100%
Film
100%
Film Type
50%
Surface (Surface Science)
25%