Planar and transverse electrical conductivity of doped a-Si: H

J. I B Wilson, S. K. Al-Sabbagh, W. Z. Manookian

Research output: Contribution to journalArticle

Abstract

The authors find a different value of electrical conductivity is obtained from the current-voltage characteristics of n-type hydrogenated amorphous silicon films measured either along or across the plane of the films. Undoped and p-type films give the expected agreement between the two contact configurations. Partially compensated doped films behave according to the dominant dopant. They discount the existence of surface band-bending as the origin of these differences in n-type films, and favour an explanation arising from inefficient incorporation of phosphorus donors in the bulk of the films.

Original languageEnglish
Article number013
Pages (from-to)1037-1040
Number of pages4
JournalSemiconductor Science and Technology
Volume3
Issue number10
DOIs
Publication statusPublished - 1988

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