Abstract
The authors find a different value of electrical conductivity is obtained from the current-voltage characteristics of n-type hydrogenated amorphous silicon films measured either along or across the plane of the films. Undoped and p-type films give the expected agreement between the two contact configurations. Partially compensated doped films behave according to the dominant dopant. They discount the existence of surface band-bending as the origin of these differences in n-type films, and favour an explanation arising from inefficient incorporation of phosphorus donors in the bulk of the films.
Original language | English |
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Article number | 013 |
Pages (from-to) | 1037-1040 |
Number of pages | 4 |
Journal | Semiconductor Science and Technology |
Volume | 3 |
Issue number | 10 |
DOIs | |
Publication status | Published - 1988 |