Abstract
The piezoelectric effect has been demonstrated for the first time in strained ZnSe/ZnCdSe quantum wells grown on (211)B GaAs substrates. A piezoelectric field strength of 1.1 105 V/cm has been observed in Zn0.8Cd0.2Se quantum wells that have a 1.3% lattice mismatch with the substrate.
| Original language | English |
|---|---|
| Pages (from-to) | 459-462 |
| Number of pages | 4 |
| Journal | Journal of Crystal Growth |
| Volume | 159 |
| Issue number | 1-4 |
| DOIs | |
| Publication status | Published - Feb 1996 |