Abstract
The piezoelectric effect has been demonstrated for the first time in strained ZnSe/ZnCdSe quantum wells grown on (211)B GaAs substrates. A piezoelectric field strength of 1.1 105 V/cm has been observed in Zn0.8Cd0.2Se quantum wells that have a 1.3% lattice mismatch with the substrate.
Original language | English |
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Pages (from-to) | 459-462 |
Number of pages | 4 |
Journal | Journal of Crystal Growth |
Volume | 159 |
Issue number | 1-4 |
DOIs | |
Publication status | Published - Feb 1996 |