Piezoelectric effect in ZnSe/ZnCdSe quantum wells grown on (211)B GaAs

S. Y. Wang; P. J. Thompson; G. Horsburgh; T. A. Steele; G. D. Brownlie; K. A. Prior; B. C. Cavenett

doi:10.1016/0022-0248(95)00592-7

Piezoelectric effect in ZnSe/ZnCdSe quantum wells grown on (211)B GaAs

S. Y. Wang, P. J. Thompson, G. Horsburgh, T. A. Steele, G. D. Brownlie, K. A. Prior, B. C. Cavenett

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

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Abstract

The piezoelectric effect has been demonstrated for the first time in strained ZnSe/ZnCdSe quantum wells grown on (211)B GaAs substrates. A piezoelectric field strength of 1.1 10⁵ V/cm has been observed in Zn_0.8Cd_0.2Se quantum wells that have a 1.3% lattice mismatch with the substrate.

Original language	English
Pages (from-to)	459-462
Number of pages	4
Journal	Journal of Crystal Growth
Volume	159
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(95)00592-7
Publication status	Published - Feb 1996

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title = "Piezoelectric effect in ZnSe/ZnCdSe quantum wells grown on (211)B GaAs",

abstract = "The piezoelectric effect has been demonstrated for the first time in strained ZnSe/ZnCdSe quantum wells grown on (211)B GaAs substrates. A piezoelectric field strength of 1.1 105 V/cm has been observed in Zn0.8Cd0.2Se quantum wells that have a 1.3% lattice mismatch with the substrate.",

author = "Wang, {S. Y.} and Thompson, {P. J.} and G. Horsburgh and Steele, {T. A.} and Brownlie, {G. D.} and Prior, {K. A.} and Cavenett, {B. C.}",

year = "1996",

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T1 - Piezoelectric effect in ZnSe/ZnCdSe quantum wells grown on (211)B GaAs

AU - Wang, S. Y.

AU - Thompson, P. J.

AU - Horsburgh, G.

AU - Steele, T. A.

AU - Brownlie, G. D.

AU - Prior, K. A.

AU - Cavenett, B. C.

PY - 1996/2

Y1 - 1996/2

N2 - The piezoelectric effect has been demonstrated for the first time in strained ZnSe/ZnCdSe quantum wells grown on (211)B GaAs substrates. A piezoelectric field strength of 1.1 105 V/cm has been observed in Zn0.8Cd0.2Se quantum wells that have a 1.3% lattice mismatch with the substrate.

AB - The piezoelectric effect has been demonstrated for the first time in strained ZnSe/ZnCdSe quantum wells grown on (211)B GaAs substrates. A piezoelectric field strength of 1.1 105 V/cm has been observed in Zn0.8Cd0.2Se quantum wells that have a 1.3% lattice mismatch with the substrate.

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U2 - 10.1016/0022-0248(95)00592-7

DO - 10.1016/0022-0248(95)00592-7

M3 - Article

SN - 0022-0248

VL - 159

SP - 459

EP - 462

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

Piezoelectric effect in ZnSe/ZnCdSe quantum wells grown on (211)B GaAs

Abstract

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