Piezoelectric effect in ZnSeZnCdSe quantum wells grown on (211)B GaAs

S. Y. Wang, P. J. Thompson, G. Horsburgh, T. A. Steele, G. D. Brownlie, K. A. Prior, B. C. Cavenett

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

The piezoelectric effect has been demonstrated for the first time in strained ZnSe/ZnCdSe quantum wells grown on (211)B GaAs substrates. A piezoelectric field strength of 1.1 105 V/cm has been observed in Zn0.8Cd0.2Se quantum wells that have a 1.3% lattice mismatch with the substrate.

Original languageEnglish
Pages (from-to)459-462
Number of pages4
JournalJournal of Crystal Growth
Volume159
Issue number1-4
DOIs
Publication statusPublished - Feb 1996

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