Piezoelectric effect in ZnSeZnCdSe quantum wells grown on (211)B GaAs

S. Y. Wang; P. J. Thompson; G. Horsburgh; T. A. Steele; G. D. Brownlie; K. A. Prior; B. C. Cavenett

doi:10.1016/0022-0248(95)00592-7

Piezoelectric effect in ZnSeZnCdSe quantum wells grown on (211)B GaAs

S. Y. Wang, P. J. Thompson, G. Horsburgh, T. A. Steele, G. D. Brownlie, K. A. Prior, B. C. Cavenett

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

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Abstract

The piezoelectric effect has been demonstrated for the first time in strained ZnSe/ZnCdSe quantum wells grown on (211)B GaAs substrates. A piezoelectric field strength of 1.1 10⁵ V/cm has been observed in Zn_0.8Cd_0.2Se quantum wells that have a 1.3% lattice mismatch with the substrate.

Original language	English
Pages (from-to)	459-462
Number of pages	4
Journal	Journal of Crystal Growth
Volume	159
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(95)00592-7
Publication status	Published - Feb 1996

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title = "Piezoelectric effect in ZnSeZnCdSe quantum wells grown on (211)B GaAs",

abstract = "The piezoelectric effect has been demonstrated for the first time in strained ZnSe/ZnCdSe quantum wells grown on (211)B GaAs substrates. A piezoelectric field strength of 1.1 105 V/cm has been observed in Zn0.8Cd0.2Se quantum wells that have a 1.3% lattice mismatch with the substrate.",

author = "Wang, {S. Y.} and Thompson, {P. J.} and G. Horsburgh and Steele, {T. A.} and Brownlie, {G. D.} and Prior, {K. A.} and Cavenett, {B. C.}",

year = "1996",

month = feb,

doi = "10.1016/0022-0248(95)00592-7",

language = "English",

volume = "159",

pages = "459--462",

journal = "Journal of Crystal Growth",

publisher = "Elsevier B.V.",

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T1 - Piezoelectric effect in ZnSeZnCdSe quantum wells grown on (211)B GaAs

AU - Wang, S. Y.

AU - Thompson, P. J.

AU - Horsburgh, G.

AU - Steele, T. A.

AU - Brownlie, G. D.

AU - Prior, K. A.

AU - Cavenett, B. C.

PY - 1996/2

Y1 - 1996/2

N2 - The piezoelectric effect has been demonstrated for the first time in strained ZnSe/ZnCdSe quantum wells grown on (211)B GaAs substrates. A piezoelectric field strength of 1.1 105 V/cm has been observed in Zn0.8Cd0.2Se quantum wells that have a 1.3% lattice mismatch with the substrate.

AB - The piezoelectric effect has been demonstrated for the first time in strained ZnSe/ZnCdSe quantum wells grown on (211)B GaAs substrates. A piezoelectric field strength of 1.1 105 V/cm has been observed in Zn0.8Cd0.2Se quantum wells that have a 1.3% lattice mismatch with the substrate.

UR - http://www.scopus.com/inward/record.url?scp=0030562362&partnerID=8YFLogxK

U2 - 10.1016/0022-0248(95)00592-7

DO - 10.1016/0022-0248(95)00592-7

M3 - Article

VL - 159

SP - 459

EP - 462

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

Piezoelectric effect in ZnSeZnCdSe quantum wells grown on (211)B GaAs

Abstract

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