Abstract
The piezoelectric effect has been demonstrated for the first time in strained ZnSe/ZnCdSe quantum wells grown on (211)B GaAs substrates. A piezoelectric field strength of 1.1 105 V/cm has been observed in Zn0.8Cd0.2Se quantum wells that have a 1.3% lattice mismatch with the substrate.
| Original language | English |
|---|---|
| Pages (from-to) | 459-462 |
| Number of pages | 4 |
| Journal | Journal of Crystal Growth |
| Volume | 159 |
| Issue number | 1-4 |
| DOIs | |
| Publication status | Published - Feb 1996 |
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Piezoelectric effect in ZnSe/ZnCdSe quantum wells grown on (211)B GaAs. / Wang, S. Y.; Thompson, P. J.; Horsburgh, G.; Steele, T. A.; Brownlie, G. D.; Prior, K. A.; Cavenett, B. C.
In: Journal of Crystal Growth, Vol. 159, No. 1-4, 02.1996, p. 459-462.Research output: Contribution to journal › Article
TY - JOUR
T1 - Piezoelectric effect in ZnSe/ZnCdSe quantum wells grown on (211)B GaAs
AU - Wang, S. Y.
AU - Thompson, P. J.
AU - Horsburgh, G.
AU - Steele, T. A.
AU - Brownlie, G. D.
AU - Prior, K. A.
AU - Cavenett, B. C.
PY - 1996/2
Y1 - 1996/2
N2 - The piezoelectric effect has been demonstrated for the first time in strained ZnSe/ZnCdSe quantum wells grown on (211)B GaAs substrates. A piezoelectric field strength of 1.1 105 V/cm has been observed in Zn0.8Cd0.2Se quantum wells that have a 1.3% lattice mismatch with the substrate.
AB - The piezoelectric effect has been demonstrated for the first time in strained ZnSe/ZnCdSe quantum wells grown on (211)B GaAs substrates. A piezoelectric field strength of 1.1 105 V/cm has been observed in Zn0.8Cd0.2Se quantum wells that have a 1.3% lattice mismatch with the substrate.
UR - http://www.scopus.com/inward/record.url?scp=0030562362&partnerID=8YFLogxK
U2 - 10.1016/0022-0248(95)00592-7
DO - 10.1016/0022-0248(95)00592-7
M3 - Article
VL - 159
SP - 459
EP - 462
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1-4
ER -