Piezoelectric effect in ZnSe/ZnCdSe quantum wells grown on (211)B GaAs

S. Y. Wang; P. J. Thompson; G. Horsburgh; T. A. Steele; G. D. Brownlie; K. A. Prior; B. C. Cavenett

doi:10.1016/0022-0248(95)00592-7

Piezoelectric effect in ZnSe/ZnCdSe quantum wells grown on (211)B GaAs

S. Y. Wang, P. J. Thompson, G. Horsburgh, T. A. Steele, G. D. Brownlie, K. A. Prior, B. C. Cavenett

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The piezoelectric effect has been demonstrated for the first time in strained ZnSe/ZnCdSe quantum wells grown on (211)B GaAs substrates. A piezoelectric field strength of 1.1 10⁵ V/cm has been observed in Zn_0.8Cd_0.2Se quantum wells that have a 1.3% lattice mismatch with the substrate.

Original language	English
Pages (from-to)	459-462
Number of pages	4
Journal	Journal of Crystal Growth
Volume	159
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(95)00592-7
Publication status	Published - Feb 1996

Access to Document

10.1016/0022-0248(95)00592-7

Cite this

@article{0850a0b7cf8647b58830ee985c337c81,

title = "Piezoelectric effect in ZnSe/ZnCdSe quantum wells grown on (211)B GaAs",

abstract = "The piezoelectric effect has been demonstrated for the first time in strained ZnSe/ZnCdSe quantum wells grown on (211)B GaAs substrates. A piezoelectric field strength of 1.1 105 V/cm has been observed in Zn0.8Cd0.2Se quantum wells that have a 1.3% lattice mismatch with the substrate.",

author = "Wang, {S. Y.} and Thompson, {P. J.} and G. Horsburgh and Steele, {T. A.} and Brownlie, {G. D.} and Prior, {K. A.} and Cavenett, {B. C.}",

year = "1996",

month = feb,

doi = "10.1016/0022-0248(95)00592-7",

language = "English",

volume = "159",

pages = "459--462",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1-4",

}

TY - JOUR

T1 - Piezoelectric effect in ZnSe/ZnCdSe quantum wells grown on (211)B GaAs

AU - Wang, S. Y.

AU - Thompson, P. J.

AU - Horsburgh, G.

AU - Steele, T. A.

AU - Brownlie, G. D.

AU - Prior, K. A.

AU - Cavenett, B. C.

PY - 1996/2

Y1 - 1996/2

N2 - The piezoelectric effect has been demonstrated for the first time in strained ZnSe/ZnCdSe quantum wells grown on (211)B GaAs substrates. A piezoelectric field strength of 1.1 105 V/cm has been observed in Zn0.8Cd0.2Se quantum wells that have a 1.3% lattice mismatch with the substrate.

AB - The piezoelectric effect has been demonstrated for the first time in strained ZnSe/ZnCdSe quantum wells grown on (211)B GaAs substrates. A piezoelectric field strength of 1.1 105 V/cm has been observed in Zn0.8Cd0.2Se quantum wells that have a 1.3% lattice mismatch with the substrate.

UR - http://www.scopus.com/inward/record.url?scp=0030562362&partnerID=8YFLogxK

U2 - 10.1016/0022-0248(95)00592-7

DO - 10.1016/0022-0248(95)00592-7

M3 - Article

VL - 159

SP - 459

EP - 462

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-4

ER -

Piezoelectric effect in ZnSe/ZnCdSe quantum wells grown on (211)B GaAs

Abstract

Access to Document

Other files and links

Fingerprint

Cite this