Piezoelectric effect in ZnSe/ZnCdSe quantum wells grown on (211)B GaAs

S. Y. Wang, P. J. Thompson, G. Horsburgh, T. A. Steele, G. D. Brownlie, K. A. Prior, B. C. Cavenett

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Abstract

The piezoelectric effect has been demonstrated for the first time in strained ZnSe/ZnCdSe quantum wells grown on (211)B GaAs substrates. A piezoelectric field strength of 1.1 105 V/cm has been observed in Zn0.8Cd0.2Se quantum wells that have a 1.3% lattice mismatch with the substrate.

Original languageEnglish
Pages (from-to)459-462
Number of pages4
JournalJournal of Crystal Growth
Volume159
Issue number1-4
DOIs
Publication statusPublished - Feb 1996

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    Wang, S. Y., Thompson, P. J., Horsburgh, G., Steele, T. A., Brownlie, G. D., Prior, K. A., & Cavenett, B. C. (1996). Piezoelectric effect in ZnSe/ZnCdSe quantum wells grown on (211)B GaAs. Journal of Crystal Growth, 159(1-4), 459-462. https://doi.org/10.1016/0022-0248(95)00592-7