Time resolved photoluminescence microscopy have been performed on GaAs/AlGaAs multiple quantum wells (MQW) that have been processed into 1D gratings by spatially selective impurity free vacancy disorder (IFVD). The semi-infinite intermixing-enhanced (IE) region luminescence at 832 nm, compared with 847 nm for the IS region, as a direct result of the increased bandgap in the GaAs wells due to the substitutive introduction of Al from the barrier layers.
|Title of host publication||International Quantum Electronics Conference Proceedings|
|Publication status||Published - 2000|
|Event||2000 International Quantum Electronics Conference - Nice, France|
Duration: 10 Sep 2000 → 15 Sep 2000
|Conference||2000 International Quantum Electronics Conference|
|Abbreviated title||IQEC 2000|
|Period||10/09/00 → 15/09/00|