Picosecond Time-Resolved Photoluminescence Microscopy of short period Impurity Free Vacancy Disordered AlGaAs gratings

J. M. Smith, G. S. Buller, A. S. Helmy, A. C. Bryce, J. H. Marsh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Time resolved photoluminescence microscopy have been performed on GaAs/AlGaAs multiple quantum wells (MQW) that have been processed into 1D gratings by spatially selective impurity free vacancy disorder (IFVD). The semi-infinite intermixing-enhanced (IE) region luminescence at 832 nm, compared with 847 nm for the IS region, as a direct result of the increased bandgap in the GaAs wells due to the substitutive introduction of Al from the barrier layers.

Original languageEnglish
Title of host publicationInternational Quantum Electronics Conference Proceedings
Pages185
Publication statusPublished - 2000
Event2000 International Quantum Electronics Conference - Nice, France
Duration: 10 Sep 200015 Sep 2000

Conference

Conference2000 International Quantum Electronics Conference
Abbreviated titleIQEC 2000
CountryFrance
CityNice
Period10/09/0015/09/00

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barrier layers
aluminum gallium arsenides
quantum wells
gratings
disorders
luminescence
microscopy
photoluminescence
impurities

Cite this

Smith, J. M., Buller, G. S., Helmy, A. S., Bryce, A. C., & Marsh, J. H. (2000). Picosecond Time-Resolved Photoluminescence Microscopy of short period Impurity Free Vacancy Disordered AlGaAs gratings. In International Quantum Electronics Conference Proceedings (pp. 185)
Smith, J. M. ; Buller, G. S. ; Helmy, A. S. ; Bryce, A. C. ; Marsh, J. H. / Picosecond Time-Resolved Photoluminescence Microscopy of short period Impurity Free Vacancy Disordered AlGaAs gratings. International Quantum Electronics Conference Proceedings. 2000. pp. 185
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abstract = "Time resolved photoluminescence microscopy have been performed on GaAs/AlGaAs multiple quantum wells (MQW) that have been processed into 1D gratings by spatially selective impurity free vacancy disorder (IFVD). The semi-infinite intermixing-enhanced (IE) region luminescence at 832 nm, compared with 847 nm for the IS region, as a direct result of the increased bandgap in the GaAs wells due to the substitutive introduction of Al from the barrier layers.",
author = "Smith, {J. M.} and Buller, {G. S.} and Helmy, {A. S.} and Bryce, {A. C.} and Marsh, {J. H.}",
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Smith, JM, Buller, GS, Helmy, AS, Bryce, AC & Marsh, JH 2000, Picosecond Time-Resolved Photoluminescence Microscopy of short period Impurity Free Vacancy Disordered AlGaAs gratings. in International Quantum Electronics Conference Proceedings. pp. 185, 2000 International Quantum Electronics Conference, Nice, France, 10/09/00.

Picosecond Time-Resolved Photoluminescence Microscopy of short period Impurity Free Vacancy Disordered AlGaAs gratings. / Smith, J. M.; Buller, G. S.; Helmy, A. S.; Bryce, A. C.; Marsh, J. H.

International Quantum Electronics Conference Proceedings. 2000. p. 185.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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T1 - Picosecond Time-Resolved Photoluminescence Microscopy of short period Impurity Free Vacancy Disordered AlGaAs gratings

AU - Smith, J. M.

AU - Buller, G. S.

AU - Helmy, A. S.

AU - Bryce, A. C.

AU - Marsh, J. H.

PY - 2000

Y1 - 2000

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AB - Time resolved photoluminescence microscopy have been performed on GaAs/AlGaAs multiple quantum wells (MQW) that have been processed into 1D gratings by spatially selective impurity free vacancy disorder (IFVD). The semi-infinite intermixing-enhanced (IE) region luminescence at 832 nm, compared with 847 nm for the IS region, as a direct result of the increased bandgap in the GaAs wells due to the substitutive introduction of Al from the barrier layers.

M3 - Conference contribution

SP - 185

BT - International Quantum Electronics Conference Proceedings

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Smith JM, Buller GS, Helmy AS, Bryce AC, Marsh JH. Picosecond Time-Resolved Photoluminescence Microscopy of short period Impurity Free Vacancy Disordered AlGaAs gratings. In International Quantum Electronics Conference Proceedings. 2000. p. 185