Picosecond Time-Resolved Photoluminescence Microscopy of short period Impurity Free Vacancy Disordered AlGaAs gratings

J. M. Smith; G. S. Buller; A. S. Helmy; A. C. Bryce; J. H. Marsh

Picosecond Time-Resolved Photoluminescence Microscopy of short period Impurity Free Vacancy Disordered AlGaAs gratings

J. M. Smith, G. S. Buller, A. S. Helmy, A. C. Bryce, J. H. Marsh

School of Engineering & Physical Sciences

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Time resolved photoluminescence microscopy have been performed on GaAs/AlGaAs multiple quantum wells (MQW) that have been processed into 1D gratings by spatially selective impurity free vacancy disorder (IFVD). The semi-infinite intermixing-enhanced (IE) region luminescence at 832 nm, compared with 847 nm for the IS region, as a direct result of the increased bandgap in the GaAs wells due to the substitutive introduction of Al from the barrier layers.

Original language	English
Title of host publication	International Quantum Electronics Conference Proceedings
Pages	185
Publication status	Published - 2000
Event	2000 International Quantum Electronics Conference - Nice, France Duration: 10 Sept 2000 → 15 Sept 2000

Conference

Conference	2000 International Quantum Electronics Conference
Abbreviated title	IQEC 2000
Country/Territory	France
City	Nice
Period	10/09/00 → 15/09/00

Cite this

@inproceedings{cd884404649643efbbcc9e0afdb27887,

title = "Picosecond Time-Resolved Photoluminescence Microscopy of short period Impurity Free Vacancy Disordered AlGaAs gratings",

abstract = "Time resolved photoluminescence microscopy have been performed on GaAs/AlGaAs multiple quantum wells (MQW) that have been processed into 1D gratings by spatially selective impurity free vacancy disorder (IFVD). The semi-infinite intermixing-enhanced (IE) region luminescence at 832 nm, compared with 847 nm for the IS region, as a direct result of the increased bandgap in the GaAs wells due to the substitutive introduction of Al from the barrier layers.",

author = "Smith, {J. M.} and Buller, {G. S.} and Helmy, {A. S.} and Bryce, {A. C.} and Marsh, {J. H.}",

year = "2000",

language = "English",

pages = "185",

booktitle = "International Quantum Electronics Conference Proceedings",

note = "2000 International Quantum Electronics Conference, IQEC 2000 ; Conference date: 10-09-2000 Through 15-09-2000",

}

TY - GEN

T1 - Picosecond Time-Resolved Photoluminescence Microscopy of short period Impurity Free Vacancy Disordered AlGaAs gratings

AU - Smith, J. M.

AU - Buller, G. S.

AU - Helmy, A. S.

AU - Bryce, A. C.

AU - Marsh, J. H.

PY - 2000

Y1 - 2000

N2 - Time resolved photoluminescence microscopy have been performed on GaAs/AlGaAs multiple quantum wells (MQW) that have been processed into 1D gratings by spatially selective impurity free vacancy disorder (IFVD). The semi-infinite intermixing-enhanced (IE) region luminescence at 832 nm, compared with 847 nm for the IS region, as a direct result of the increased bandgap in the GaAs wells due to the substitutive introduction of Al from the barrier layers.

AB - Time resolved photoluminescence microscopy have been performed on GaAs/AlGaAs multiple quantum wells (MQW) that have been processed into 1D gratings by spatially selective impurity free vacancy disorder (IFVD). The semi-infinite intermixing-enhanced (IE) region luminescence at 832 nm, compared with 847 nm for the IS region, as a direct result of the increased bandgap in the GaAs wells due to the substitutive introduction of Al from the barrier layers.

M3 - Conference contribution

SP - 185

BT - International Quantum Electronics Conference Proceedings

T2 - 2000 International Quantum Electronics Conference

Y2 - 10 September 2000 through 15 September 2000

ER -

Picosecond Time-Resolved Photoluminescence Microscopy of short period Impurity Free Vacancy Disordered AlGaAs gratings

Abstract

Conference

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