Abstract
Time resolved photoluminescence microscopy have been performed on GaAs/AlGaAs multiple quantum wells (MQW) that have been processed into 1D gratings by spatially selective impurity free vacancy disorder (IFVD). The semi-infinite intermixing-enhanced (IE) region luminescence at 832 nm, compared with 847 nm for the IS region, as a direct result of the increased bandgap in the GaAs wells due to the substitutive introduction of Al from the barrier layers.
Original language | English |
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Title of host publication | International Quantum Electronics Conference Proceedings |
Pages | 185 |
Publication status | Published - 2000 |
Event | 2000 International Quantum Electronics Conference - Nice, France Duration: 10 Sept 2000 → 15 Sept 2000 |
Conference
Conference | 2000 International Quantum Electronics Conference |
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Abbreviated title | IQEC 2000 |
Country/Territory | France |
City | Nice |
Period | 10/09/00 → 15/09/00 |