Picosecond time-resolved photoluminescence at detection wavelengths greater than 1500 nm

Jason M. Smith; Philip A. Hiskett; Gerald S. Buller

Picosecond time-resolved photoluminescence at detection wavelengths greater than 1500 nm

Jason M. Smith, Philip A. Hiskett, Gerald S. Buller

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We report what is to our knowledge the first application of high-efficiency InGaAs/InP photon-counting diode detectors in time-resolved photoluminescence measurements at wavelength greater than 1500 nm. When they were cooled to 77 K and used in conjunction with the time-correlated single-photon counting technique, the detectors were capable of an instrumental response of 230 ps and a noise equivalent power of 2 × 10 ¹⁷ W Hz ^1/2. Preliminary measurement of a semiconductor heterostructure indicates sensitivity at photogenerated carrier densities as low as 10¹⁴ cm ³. This development facilitates the detailed characterization of dominant recombination mechanisms in semiconductor optoelectronic materials and devices designed to operate in the third telecommunications spectral window. © 2001 Optical Society of America.

Original language	English
Pages (from-to)	731-733
Number of pages	3
Journal	Optics Letters
Volume	26
Issue number	10
Publication status	Published - 15 May 2001

Cite this

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title = "Picosecond time-resolved photoluminescence at detection wavelengths greater than 1500 nm",

abstract = "We report what is to our knowledge the first application of high-efficiency InGaAs/InP photon-counting diode detectors in time-resolved photoluminescence measurements at wavelength greater than 1500 nm. When they were cooled to 77 K and used in conjunction with the time-correlated single-photon counting technique, the detectors were capable of an instrumental response of 230 ps and a noise equivalent power of 2 × 10 17 W Hz 1/2. Preliminary measurement of a semiconductor heterostructure indicates sensitivity at photogenerated carrier densities as low as 1014 cm 3. This development facilitates the detailed characterization of dominant recombination mechanisms in semiconductor optoelectronic materials and devices designed to operate in the third telecommunications spectral window. {\textcopyright} 2001 Optical Society of America.",

author = "Smith, {Jason M.} and Hiskett, {Philip A.} and Buller, {Gerald S.}",

year = "2001",

month = may,

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language = "English",

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pages = "731--733",

journal = "Optics Letters",

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T1 - Picosecond time-resolved photoluminescence at detection wavelengths greater than 1500 nm

AU - Smith, Jason M.

AU - Hiskett, Philip A.

AU - Buller, Gerald S.

PY - 2001/5/15

Y1 - 2001/5/15

N2 - We report what is to our knowledge the first application of high-efficiency InGaAs/InP photon-counting diode detectors in time-resolved photoluminescence measurements at wavelength greater than 1500 nm. When they were cooled to 77 K and used in conjunction with the time-correlated single-photon counting technique, the detectors were capable of an instrumental response of 230 ps and a noise equivalent power of 2 × 10 17 W Hz 1/2. Preliminary measurement of a semiconductor heterostructure indicates sensitivity at photogenerated carrier densities as low as 1014 cm 3. This development facilitates the detailed characterization of dominant recombination mechanisms in semiconductor optoelectronic materials and devices designed to operate in the third telecommunications spectral window. © 2001 Optical Society of America.

AB - We report what is to our knowledge the first application of high-efficiency InGaAs/InP photon-counting diode detectors in time-resolved photoluminescence measurements at wavelength greater than 1500 nm. When they were cooled to 77 K and used in conjunction with the time-correlated single-photon counting technique, the detectors were capable of an instrumental response of 230 ps and a noise equivalent power of 2 × 10 17 W Hz 1/2. Preliminary measurement of a semiconductor heterostructure indicates sensitivity at photogenerated carrier densities as low as 1014 cm 3. This development facilitates the detailed characterization of dominant recombination mechanisms in semiconductor optoelectronic materials and devices designed to operate in the third telecommunications spectral window. © 2001 Optical Society of America.

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M3 - Article

SN - 1539-4794

VL - 26

SP - 731

EP - 733

JO - Optics Letters

JF - Optics Letters

IS - 10

ER -

Picosecond time-resolved photoluminescence at detection wavelengths greater than 1500 nm

Abstract

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