Picosecond photoinduced-absorption studies of band-tail thermalization in hydrogenated amorphous silicon-carbon alloys

U. Eicker, A. K. Darzi, B. Wherrett, J. I B Wilson

Research output: Contribution to journalArticle

Abstract

Band-tail thermalization of photoexcited carriers in doped and undoped a-Si1-xCx:H alloys is studied using the picosecond photoinduced-absorption technique. With carrier densities of about 1020 cm-3 most of the charged impurity states as well as native defects are saturated and all photoinduced-absorption decays can be attributed to the band-tail width of the material. We find that carbon alloying and doping both increase the band-tail width by increasing the network disorder and by introducing new states for deeper thermalization. The optical absorption cross sections eff obtained for a given excitation energy decrease in high-band-gap materials and highly doped samples. © 1989 The American Physical Society.

Original languageEnglish
Pages (from-to)3664-3669
Number of pages6
JournalPhysical Review B: Condensed Matter
Volume39
Issue number6
DOIs
Publication statusPublished - 1989

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