Picosecond measurement of Auger recombination rates in InGaAs

INIS

• carrier density 50%
• carriers 100%
• decay 50%
• energy 50%
• excitation 50%
• neodymium 50%
• parametric amplifiers 50%
• photons 50%
• probes 50%
• pulses 50%
• recombination 100%
• yttrium aluminium garnets 50%

Engineering

• Auger Recombination 100%
• Band Edge 50%
• Carrier Density 50%
• Indium Gallium Arsenide 100%
• Optical Parametric Amplifier 50%
• Photon Energy 50%
• Picosecond 100%
• Yttrium-Aluminum-Garnet 50%