Picosecond measurement of Auger recombination rates in InGaAs

M. E. Prise, M. R. Taghizadeh, S. D. Smith, B. S. Wherrett

Research output: Contribution to journalArticle

Abstract

The picosecond decay of carriers in InGaAs, following photo excitation at photon energies just above the band edge, has been measured. A mode-locked neodymium:yttrium aluminum garnet pumped optical parametric amplifier provided the tunable, 35-ps pulses for excite-probe measurements. At carrier densities in excess of 1018 cm-3 Auger processes are found to dominate the carrier recombination. We determine an Auger rate of 2.5±0.5×10-28 cm6 s-1.

Original languageEnglish
Pages (from-to)652-654
Number of pages3
JournalApplied Physics Letters
Volume45
Issue number6
DOIs
Publication statusPublished - 1984

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neodymium
parametric amplifiers
photoexcitation
light amplifiers
yttrium-aluminum garnet
probes
photons
decay
pulses
energy

Cite this

Prise, M. E., Taghizadeh, M. R., Smith, S. D., & Wherrett, B. S. (1984). Picosecond measurement of Auger recombination rates in InGaAs. Applied Physics Letters, 45(6), 652-654. https://doi.org/10.1063/1.95344
Prise, M. E. ; Taghizadeh, M. R. ; Smith, S. D. ; Wherrett, B. S. / Picosecond measurement of Auger recombination rates in InGaAs. In: Applied Physics Letters. 1984 ; Vol. 45, No. 6. pp. 652-654.
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Prise, ME, Taghizadeh, MR, Smith, SD & Wherrett, BS 1984, 'Picosecond measurement of Auger recombination rates in InGaAs', Applied Physics Letters, vol. 45, no. 6, pp. 652-654. https://doi.org/10.1063/1.95344

Picosecond measurement of Auger recombination rates in InGaAs. / Prise, M. E.; Taghizadeh, M. R.; Smith, S. D.; Wherrett, B. S.

In: Applied Physics Letters, Vol. 45, No. 6, 1984, p. 652-654.

Research output: Contribution to journalArticle

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AU - Prise, M. E.

AU - Taghizadeh, M. R.

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