Picosecond measurement of Auger recombination rates in InGaAs

M. E. Prise; M. R. Taghizadeh; S. D. Smith; B. S. Wherrett

doi:10.1063/1.95344

Picosecond measurement of Auger recombination rates in InGaAs

M. E. Prise, M. R. Taghizadeh, S. D. Smith, B. S. Wherrett

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

The picosecond decay of carriers in InGaAs, following photo excitation at photon energies just above the band edge, has been measured. A mode-locked neodymium:yttrium aluminum garnet pumped optical parametric amplifier provided the tunable, 35-ps pulses for excite-probe measurements. At carrier densities in excess of 10¹⁸ cm^-3 Auger processes are found to dominate the carrier recombination. We determine an Auger rate of 2.5±0.5×10^-28 cm⁶ s^-1.

Original language	English
Pages (from-to)	652-654
Number of pages	3
Journal	Applied Physics Letters
Volume	45
Issue number	6
DOIs	https://doi.org/10.1063/1.95344
Publication status	Published - 1984

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10.1063/1.95344

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title = "Picosecond measurement of Auger recombination rates in InGaAs",

abstract = "The picosecond decay of carriers in InGaAs, following photo excitation at photon energies just above the band edge, has been measured. A mode-locked neodymium:yttrium aluminum garnet pumped optical parametric amplifier provided the tunable, 35-ps pulses for excite-probe measurements. At carrier densities in excess of 1018 cm-3 Auger processes are found to dominate the carrier recombination. We determine an Auger rate of 2.5±0.5×10-28 cm6 s-1.",

author = "Prise, {M. E.} and Taghizadeh, {M. R.} and Smith, {S. D.} and Wherrett, {B. S.}",

year = "1984",

doi = "10.1063/1.95344",

language = "English",

volume = "45",

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journal = "Applied Physics Letters",

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T1 - Picosecond measurement of Auger recombination rates in InGaAs

AU - Prise, M. E.

AU - Taghizadeh, M. R.

AU - Smith, S. D.

AU - Wherrett, B. S.

PY - 1984

Y1 - 1984

N2 - The picosecond decay of carriers in InGaAs, following photo excitation at photon energies just above the band edge, has been measured. A mode-locked neodymium:yttrium aluminum garnet pumped optical parametric amplifier provided the tunable, 35-ps pulses for excite-probe measurements. At carrier densities in excess of 1018 cm-3 Auger processes are found to dominate the carrier recombination. We determine an Auger rate of 2.5±0.5×10-28 cm6 s-1.

AB - The picosecond decay of carriers in InGaAs, following photo excitation at photon energies just above the band edge, has been measured. A mode-locked neodymium:yttrium aluminum garnet pumped optical parametric amplifier provided the tunable, 35-ps pulses for excite-probe measurements. At carrier densities in excess of 1018 cm-3 Auger processes are found to dominate the carrier recombination. We determine an Auger rate of 2.5±0.5×10-28 cm6 s-1.

U2 - 10.1063/1.95344

DO - 10.1063/1.95344

M3 - Article

SN - 0003-6951

VL - 45

SP - 652

EP - 654

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

ER -

Picosecond measurement of Auger recombination rates in InGaAs

Abstract

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