Picosecond measurement of Auger recombination rates in InGaAs

M. E. Prise, M. R. Taghizadeh, S. D. Smith, B. S. Wherrett

Research output: Contribution to journalArticle


The picosecond decay of carriers in InGaAs, following photo excitation at photon energies just above the band edge, has been measured. A mode-locked neodymium:yttrium aluminum garnet pumped optical parametric amplifier provided the tunable, 35-ps pulses for excite-probe measurements. At carrier densities in excess of 1018 cm-3 Auger processes are found to dominate the carrier recombination. We determine an Auger rate of 2.5±0.5×10-28 cm6 s-1.

Original languageEnglish
Pages (from-to)652-654
Number of pages3
JournalApplied Physics Letters
Issue number6
Publication statusPublished - 1984

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    Prise, M. E., Taghizadeh, M. R., Smith, S. D., & Wherrett, B. S. (1984). Picosecond measurement of Auger recombination rates in InGaAs. Applied Physics Letters, 45(6), 652-654. https://doi.org/10.1063/1.95344