Picosecond laser ranging at wavelengths up to 2.4 μm using an InAs avalanche photodiode

Salvatore Butera, Peter Vines, C. H. Tan, I. Sandall, Gerald Stuart Buller

Research output: Contribution to journalArticle

3 Citations (Scopus)
38 Downloads (Pure)

Abstract

Time-of-flight measurements using pulsed laser illumination in the wavelength region between 1.3 to 2.37 μm have been demonstrated with an InAs avalanche photodiode (APD). InAs is photo-sensitive at wavelengths up to 3.5 μm and with predominantly electron multiplication reducing detector noise, InAs APDs have clear potential for sensitive optical measurements of picosecond transients in the mid-wave infrared. Laboratory-based demonstrations of time-of-flight ranging using InAs APDs operated at room temperature is described.

Original languageEnglish
Pages (from-to)385-386
Number of pages2
JournalElectronics Letters
Volume52
Issue number5
Early online date8 Feb 2016
DOIs
Publication statusPublished - 3 Mar 2016

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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