Picosecond laser ranging at wavelengths up to 2.4 μm using an InAs avalanche photodiode

Salvatore Butera; Peter Vines; C. H. Tan; I. Sandall; Gerald Stuart Buller

doi:10.1049/el.2015.3995

Picosecond laser ranging at wavelengths up to 2.4 μm using an InAs avalanche photodiode

Salvatore Butera, Peter Vines, C. H. Tan, I. Sandall, Gerald Stuart Buller

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Abstract

Time-of-flight measurements using pulsed laser illumination in the wavelength region between 1.3 to 2.37 μm have been demonstrated with an InAs avalanche photodiode (APD). InAs is photo-sensitive at wavelengths up to 3.5 μm and with predominantly electron multiplication reducing detector noise, InAs APDs have clear potential for sensitive optical measurements of picosecond transients in the mid-wave infrared. Laboratory-based demonstrations of time-of-flight ranging using InAs APDs operated at room temperature is described.

Original language	English
Pages (from-to)	385-386
Number of pages	2
Journal	Electronics Letters
Volume	52
Issue number	5
Early online date	8 Feb 2016
DOIs	https://doi.org/10.1049/el.2015.3995
Publication status	Published - 3 Mar 2016

ASJC Scopus subject areas

Electrical and Electronic Engineering

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abstract = "Time-of-flight measurements using pulsed laser illumination in the wavelength region between 1.3 to 2.37 μm have been demonstrated with an InAs avalanche photodiode (APD). InAs is photo-sensitive at wavelengths up to 3.5 μm and with predominantly electron multiplication reducing detector noise, InAs APDs have clear potential for sensitive optical measurements of picosecond transients in the mid-wave infrared. Laboratory-based demonstrations of time-of-flight ranging using InAs APDs operated at room temperature is described.",

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T1 - Picosecond laser ranging at wavelengths up to 2.4 μm using an InAs avalanche photodiode

AU - Butera, Salvatore

AU - Vines, Peter

AU - Tan, C. H.

AU - Sandall, I.

AU - Buller, Gerald Stuart

PY - 2016/3/3

Y1 - 2016/3/3

N2 - Time-of-flight measurements using pulsed laser illumination in the wavelength region between 1.3 to 2.37 μm have been demonstrated with an InAs avalanche photodiode (APD). InAs is photo-sensitive at wavelengths up to 3.5 μm and with predominantly electron multiplication reducing detector noise, InAs APDs have clear potential for sensitive optical measurements of picosecond transients in the mid-wave infrared. Laboratory-based demonstrations of time-of-flight ranging using InAs APDs operated at room temperature is described.

AB - Time-of-flight measurements using pulsed laser illumination in the wavelength region between 1.3 to 2.37 μm have been demonstrated with an InAs avalanche photodiode (APD). InAs is photo-sensitive at wavelengths up to 3.5 μm and with predominantly electron multiplication reducing detector noise, InAs APDs have clear potential for sensitive optical measurements of picosecond transients in the mid-wave infrared. Laboratory-based demonstrations of time-of-flight ranging using InAs APDs operated at room temperature is described.

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U2 - 10.1049/el.2015.3995

DO - 10.1049/el.2015.3995

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EP - 386

JO - Electronics Letters

JF - Electronics Letters

IS - 5

ER -

Picosecond laser ranging at wavelengths up to 2.4 μm using an InAs avalanche photodiode

Abstract

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