Picosecond intersubband dynamics in p-Si/SiGe quantum-well emitter structures

P. Murzyn, C. R. Pidgeon, J. P R Wells, I. V. Bradley, Z. Ikonic, R. W. Kelsall, P. Harrison, S. A. Lynch, D. J. Paul, D. D. Arnone, D. J. Robbins, D. Norris, A. G. Cullis

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Abstract

We report time-resolved (ps) studies of the dynamics of intersubband transitions in p-Si/SiGe multiquantum-well structures in the far-infrared (FIR) regime, ?<?LO, utilizing the Dutch free electron laser, (entitled FELIX - free electron laser for infrared radiation). The calculated scattering rates for optic and acoustic phonon, and alloy scattering have been included in a rate equation model of the transient FIR intersubband absorption, and show excellent agreement with our degenerate pump-probe spectroscopy measurements where, after an initial rise time determined by the resolution of our measurement, we determine a decay time of ~10 ps. This is found to be approximately constant in the temperature range from 4 to 100 K, in good agreement with the predictions of alloy scattering in the Si 0.7Ge0.3 wells. © 2002 American Institute of Physics.

Original languageEnglish
Pages (from-to)1456-1458
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number8
DOIs
Publication statusPublished - 25 Feb 2002

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