Picosecond free-electron laser studies of Auger recombination in arsenic-rich lnAs1-xSbx strained layer superlattices at 300 K

C. M. Ciesla, B. N. Murdin, C. R. Pidgeon, R. A. Stradling, C. C. Phillips, D. J. Bain, I. Galbraith, D. A. Jaroszynski, C. J G M Langerak, P. J P Tang, M. J. Pullin

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3 Citations (Scopus)

Abstract

Room temperature pump-probe transmission experiments have been performed on arsenic-rich InAs/InAsi_tSbv strained layer superlattices (SLS) using a picosecond farinfrared free electron laser. With excitation frequencies well above the fundamental bandgap, near 10 [un, large excited carrier concentrations were obtained, allowing the density dependence of the recombination rate to be determined directly. The results have been interpreted in terms of an 8x8 k. p SLS energy band calculation, including the full dispersion for both k in-plane and k parallel to the growth direction. A comparison with identical measurements on epilayers of InSb, of comparable room temperature bandgap, shows that the Auger processes have been substantially suppressed in the superlattices. In the non-degenerate regime, where the Auger lifetime scales as taug-1 = C1Ne2, a value of C1 between 10 and 100 times smaller is obtained for the SLS structures. © IEE, 1997.

Original languageEnglish
Pages (from-to)331-335
Number of pages5
JournalIEE Proceedings - Optoelectronics
Volume144
Issue number5
Publication statusPublished - 1997

Keywords

  • Free electron lasers
  • Strained layer superlatlices

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