Picosecond free-electron laser studies of Auger recombination in arsenic-rich InAsl-xSbx strained layer superlattices at 300K

C M Ciesla, B N Murdin, Carl Pidgeon, R A Stradling, C C Phillips

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	331 335
Number of pages	331335
Journal	IEE Proceedings - Optoelectronics
Volume	144
Publication status	Published - 1997

Cite this

@article{b136ddd1742b4a05a61c1688dafb7f1f,

title = "Picosecond free-electron laser studies of Auger recombination in arsenic-rich InAsl-xSbx strained layer superlattices at 300K",

author = "Ciesla, {C M} and Murdin, {B N} and Carl Pidgeon and Stradling, {R A} and Phillips, {C C}",

year = "1997",

language = "English",

volume = "144",

pages = "331 335",

journal = "IEE Proceedings - Optoelectronics",

issn = "1350-2433",

publisher = "Institute of Electrical Engineers",

}

TY - JOUR

T1 - Picosecond free-electron laser studies of Auger recombination in arsenic-rich InAsl-xSbx strained layer superlattices at 300K

AU - Ciesla, C M

AU - Murdin, B N

AU - Pidgeon, Carl

AU - Stradling, R A

AU - Phillips, C C

PY - 1997

Y1 - 1997

M3 - Article

SN - 1350-2433

VL - 144

SP - 331 335

JO - IEE Proceedings - Optoelectronics

JF - IEE Proceedings - Optoelectronics

ER -