Photovoltage and carrier concentration profiles of ZnSe/ZnCdSe quantum well laser diodes

S. Y. Wang, J. Simpson, H. Stewart, S. J A Adams, I. Hauksson, Y. Kawakami, M. R. Taghizadeh, K. A. Prior, B. C. Cavenett

Research output: Contribution to journalArticle

Abstract

In this paper, we report the fabrication of ZnSe/Zn0.82Cd0.18Se quantum well laser structures on GaAs substrates using nitrogen and iodine as p- and n-dopants but without the use of an epitaxial GaAs buffer layer. The lasers show excellent mode structure and emit at 474.8 nm at 77 K in the pulsed mode. We have used recently developed electrochemical profiling techniques such as capacitance-voltage (C-V) measurements to determine carrier concentration profiles through the laser structure and photovoltage spectroscopy (PVS) to profile the bandgaps. In particular, the PVS profiling is invaluable for determining the compositions of the layers structures. This is the first time that such measurements have been obtained for II-VI laser structures. © 1993.

Original languageEnglish
Pages (from-to)508-511
Number of pages4
JournalPhysica B: Condensed Matter
Volume185
Issue number1-4
Publication statusPublished - Apr 1993

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    Wang, S. Y., Simpson, J., Stewart, H., Adams, S. J. A., Hauksson, I., Kawakami, Y., Taghizadeh, M. R., Prior, K. A., & Cavenett, B. C. (1993). Photovoltage and carrier concentration profiles of ZnSe/ZnCdSe quantum well laser diodes. Physica B: Condensed Matter, 185(1-4), 508-511.