Photovoltage and carrier concentration profiles of ZnSe/ZnCdSe quantum well laser diodes

S. Y. Wang; J. Simpson; H. Stewart; S. J A Adams; I. Hauksson; Y. Kawakami; M. R. Taghizadeh; K. A. Prior; B. C. Cavenett

Photovoltage and carrier concentration profiles of ZnSe/ZnCdSe quantum well laser diodes

S. Y. Wang, J. Simpson, H. Stewart, S. J A Adams, I. Hauksson, Y. Kawakami, M. R. Taghizadeh, K. A. Prior, B. C. Cavenett

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

In this paper, we report the fabrication of ZnSe/Zn_0.82Cd_0.18Se quantum well laser structures on GaAs substrates using nitrogen and iodine as p- and n-dopants but without the use of an epitaxial GaAs buffer layer. The lasers show excellent mode structure and emit at 474.8 nm at 77 K in the pulsed mode. We have used recently developed electrochemical profiling techniques such as capacitance-voltage (C-V) measurements to determine carrier concentration profiles through the laser structure and photovoltage spectroscopy (PVS) to profile the bandgaps. In particular, the PVS profiling is invaluable for determining the compositions of the layers structures. This is the first time that such measurements have been obtained for II-VI laser structures. © 1993.

Original language	English
Pages (from-to)	508-511
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	185
Issue number	1-4
Publication status	Published - Apr 1993

Cite this

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title = "Photovoltage and carrier concentration profiles of ZnSe/ZnCdSe quantum well laser diodes",

abstract = "In this paper, we report the fabrication of ZnSe/Zn0.82Cd0.18Se quantum well laser structures on GaAs substrates using nitrogen and iodine as p- and n-dopants but without the use of an epitaxial GaAs buffer layer. The lasers show excellent mode structure and emit at 474.8 nm at 77 K in the pulsed mode. We have used recently developed electrochemical profiling techniques such as capacitance-voltage (C-V) measurements to determine carrier concentration profiles through the laser structure and photovoltage spectroscopy (PVS) to profile the bandgaps. In particular, the PVS profiling is invaluable for determining the compositions of the layers structures. This is the first time that such measurements have been obtained for II-VI laser structures. {\textcopyright} 1993.",

author = "Wang, {S. Y.} and J. Simpson and H. Stewart and Adams, {S. J A} and I. Hauksson and Y. Kawakami and Taghizadeh, {M. R.} and Prior, {K. A.} and Cavenett, {B. C.}",

year = "1993",

month = apr,

language = "English",

volume = "185",

pages = "508--511",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

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TY - JOUR

T1 - Photovoltage and carrier concentration profiles of ZnSe/ZnCdSe quantum well laser diodes

AU - Wang, S. Y.

AU - Simpson, J.

AU - Stewart, H.

AU - Adams, S. J A

AU - Hauksson, I.

AU - Kawakami, Y.

AU - Taghizadeh, M. R.

AU - Prior, K. A.

AU - Cavenett, B. C.

PY - 1993/4

Y1 - 1993/4

N2 - In this paper, we report the fabrication of ZnSe/Zn0.82Cd0.18Se quantum well laser structures on GaAs substrates using nitrogen and iodine as p- and n-dopants but without the use of an epitaxial GaAs buffer layer. The lasers show excellent mode structure and emit at 474.8 nm at 77 K in the pulsed mode. We have used recently developed electrochemical profiling techniques such as capacitance-voltage (C-V) measurements to determine carrier concentration profiles through the laser structure and photovoltage spectroscopy (PVS) to profile the bandgaps. In particular, the PVS profiling is invaluable for determining the compositions of the layers structures. This is the first time that such measurements have been obtained for II-VI laser structures. © 1993.

AB - In this paper, we report the fabrication of ZnSe/Zn0.82Cd0.18Se quantum well laser structures on GaAs substrates using nitrogen and iodine as p- and n-dopants but without the use of an epitaxial GaAs buffer layer. The lasers show excellent mode structure and emit at 474.8 nm at 77 K in the pulsed mode. We have used recently developed electrochemical profiling techniques such as capacitance-voltage (C-V) measurements to determine carrier concentration profiles through the laser structure and photovoltage spectroscopy (PVS) to profile the bandgaps. In particular, the PVS profiling is invaluable for determining the compositions of the layers structures. This is the first time that such measurements have been obtained for II-VI laser structures. © 1993.

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M3 - Article

SN - 0921-4526

VL - 185

SP - 508

EP - 511

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1-4

ER -

Photovoltage and carrier concentration profiles of ZnSe/ZnCdSe quantum well laser diodes

Abstract

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