Photon-recycling and optically driven plasma-expansion techniques applied to lifetime experiments on molecular-beam-epitaxy ZnSe

I. J. Blewett, N. R. Gallaher, A. K. Kar, B. S. Wherrett

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Transient-grating techniques are used to investigate the picosecond dynamics of photoexcited carriers in a range of n- and p-doped ZnSe thin-film layers grown by molecular-beam epitaxy. Two-photon absorption is employed experimentally to generate known excitation levels, comparable with those under laser action in II-VI diode structures. The analysis of the measured grating decays, incorporating photon recycling, reveals carrier lifetimes of the order of 300 ps and radiative recombination coefficients of the order of 10-8 cm3 s-1. The influence of photon-assisted plasma expansion at excitation levels above the threshold for stimulated emission is modeled and quantified. © 1996 Optical Society of America.

Original languageEnglish
Pages (from-to)779-787
Number of pages9
JournalJournal of the Optical Society of America B: Optical Physics
Volume13
Issue number5
Publication statusPublished - May 1996

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