Photoluminescence excitation spectroscopy of the lasing transition in ZnSe-(Zn,Cd)Se quantum wells

Y. Kawakami; I. Hauksson; J. Simpson; H. Stewart; I. Galbraith; K. A. Prior; B. C. Cavenett

Photoluminescence excitation spectroscopy of the lasing transition in ZnSe-(Zn,Cd)Se quantum wells

Y. Kawakami, I. Hauksson, J. Simpson, H. Stewart, I. Galbraith, K. A. Prior, B. C. Cavenett

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

Photoluminescence excitation spectroscopy of the lasing transition in II-VI laser structures allows direct observation of the absorption edge during laser operation. We have investigated a set of Zn_0.8 Cd_0.2Se/ZnSe multiple quantum well structures with well widths ranging from 30 to 120 Å and the photoluminescence at low excitation levels consistently shows the n = 1 heavy hole exciton transition, while above threshold the lasing peak is observed to be red-shifted with a localization energy which is always much greater than the Stokes shift due to inhomogeneities. Excitonic absorption features can be observed up to the highest excitation energies and the localization energy for all well widths remains around 30 meV suggesting that the optical gain above lasing threshold involves exciton-LO phonon emission. © 1994.

Original language	English
Pages (from-to)	759-763
Number of pages	5
Journal	Journal of Crystal Growth
Volume	138
Issue number	1-4
Publication status	Published - 2 Apr 1994

Cite this

@article{d4262edaf3ff415198060197c221d671,

title = "Photoluminescence excitation spectroscopy of the lasing transition in ZnSe-(Zn,Cd)Se quantum wells",

abstract = "Photoluminescence excitation spectroscopy of the lasing transition in II-VI laser structures allows direct observation of the absorption edge during laser operation. We have investigated a set of Zn0.8 Cd0.2Se/ZnSe multiple quantum well structures with well widths ranging from 30 to 120 {\AA} and the photoluminescence at low excitation levels consistently shows the n = 1 heavy hole exciton transition, while above threshold the lasing peak is observed to be red-shifted with a localization energy which is always much greater than the Stokes shift due to inhomogeneities. Excitonic absorption features can be observed up to the highest excitation energies and the localization energy for all well widths remains around 30 meV suggesting that the optical gain above lasing threshold involves exciton-LO phonon emission. {\textcopyright} 1994.",

author = "Y. Kawakami and I. Hauksson and J. Simpson and H. Stewart and I. Galbraith and Prior, {K. A.} and Cavenett, {B. C.}",

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journal = "Journal of Crystal Growth",

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T1 - Photoluminescence excitation spectroscopy of the lasing transition in ZnSe-(Zn,Cd)Se quantum wells

AU - Kawakami, Y.

AU - Hauksson, I.

AU - Simpson, J.

AU - Stewart, H.

AU - Galbraith, I.

AU - Prior, K. A.

AU - Cavenett, B. C.

PY - 1994/4/2

Y1 - 1994/4/2

N2 - Photoluminescence excitation spectroscopy of the lasing transition in II-VI laser structures allows direct observation of the absorption edge during laser operation. We have investigated a set of Zn0.8 Cd0.2Se/ZnSe multiple quantum well structures with well widths ranging from 30 to 120 Å and the photoluminescence at low excitation levels consistently shows the n = 1 heavy hole exciton transition, while above threshold the lasing peak is observed to be red-shifted with a localization energy which is always much greater than the Stokes shift due to inhomogeneities. Excitonic absorption features can be observed up to the highest excitation energies and the localization energy for all well widths remains around 30 meV suggesting that the optical gain above lasing threshold involves exciton-LO phonon emission. © 1994.

AB - Photoluminescence excitation spectroscopy of the lasing transition in II-VI laser structures allows direct observation of the absorption edge during laser operation. We have investigated a set of Zn0.8 Cd0.2Se/ZnSe multiple quantum well structures with well widths ranging from 30 to 120 Å and the photoluminescence at low excitation levels consistently shows the n = 1 heavy hole exciton transition, while above threshold the lasing peak is observed to be red-shifted with a localization energy which is always much greater than the Stokes shift due to inhomogeneities. Excitonic absorption features can be observed up to the highest excitation energies and the localization energy for all well widths remains around 30 meV suggesting that the optical gain above lasing threshold involves exciton-LO phonon emission. © 1994.

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M3 - Article

SN - 0022-0248

VL - 138

SP - 759

EP - 763

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

Photoluminescence excitation spectroscopy of the lasing transition in ZnSe-(Zn,Cd)Se quantum wells

Abstract

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