Photoluminescence excitation spectroscopy of the dense exciton gas involved in the lasing transition in ZnSe epitaxial layers

Y. Kawakami; J. Simpson; K. A. Prior; B. C. Cavenett

doi:10.1109/68.281810

Photoluminescence excitation spectroscopy of the dense exciton gas involved in the lasing transition in ZnSe epitaxial layers

Y. Kawakami, J. Simpson, K. A. Prior, B. C. Cavenett

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The lasing transition in ZnSe epitaxial layers has been investigated at 77 K. The lowest lasing threshold (I_th) was achieved when the layers were resonantly excited at the photon energy of the exciton level. It was found that the exciton level at the excitation intensity just above the I_th was red-shifted by about 16 meV compared with the free exciton line (2.792 eV) under weak excitation condition. The energy difference between the exciton line and the lasing peak was about 19 meV at I = I_th and increased with increasing excitation intensity up to I = 8×I_th. This suggests that the stimulated emission occurs due to the inelastic exciton-exciton scattering process at this temperature.

Original language	English
Pages (from-to)	505-508
Number of pages	4
Journal	IEEE Photonics Technology Letters
Volume	6
Issue number	4
DOIs	https://doi.org/10.1109/68.281810
Publication status	Published - Apr 1994

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@article{d2acdcefd8c54684823897b85f2ddc26,

title = "Photoluminescence excitation spectroscopy of the dense exciton gas involved in the lasing transition in ZnSe epitaxial layers",

abstract = "The lasing transition in ZnSe epitaxial layers has been investigated at 77 K. The lowest lasing threshold (Ith) was achieved when the layers were resonantly excited at the photon energy of the exciton level. It was found that the exciton level at the excitation intensity just above the Ith was red-shifted by about 16 meV compared with the free exciton line (2.792 eV) under weak excitation condition. The energy difference between the exciton line and the lasing peak was about 19 meV at I = Ith and increased with increasing excitation intensity up to I = 8×Ith. This suggests that the stimulated emission occurs due to the inelastic exciton-exciton scattering process at this temperature.",

author = "Y. Kawakami and J. Simpson and Prior, {K. A.} and Cavenett, {B. C.}",

year = "1994",

month = apr,

doi = "10.1109/68.281810",

language = "English",

volume = "6",

pages = "505--508",

journal = "IEEE Photonics Technology Letters",

publisher = "IEEE",

number = "4",

}

TY - JOUR

T1 - Photoluminescence excitation spectroscopy of the dense exciton gas involved in the lasing transition in ZnSe epitaxial layers

AU - Kawakami, Y.

AU - Simpson, J.

AU - Prior, K. A.

AU - Cavenett, B. C.

PY - 1994/4

Y1 - 1994/4

N2 - The lasing transition in ZnSe epitaxial layers has been investigated at 77 K. The lowest lasing threshold (Ith) was achieved when the layers were resonantly excited at the photon energy of the exciton level. It was found that the exciton level at the excitation intensity just above the Ith was red-shifted by about 16 meV compared with the free exciton line (2.792 eV) under weak excitation condition. The energy difference between the exciton line and the lasing peak was about 19 meV at I = Ith and increased with increasing excitation intensity up to I = 8×Ith. This suggests that the stimulated emission occurs due to the inelastic exciton-exciton scattering process at this temperature.

AB - The lasing transition in ZnSe epitaxial layers has been investigated at 77 K. The lowest lasing threshold (Ith) was achieved when the layers were resonantly excited at the photon energy of the exciton level. It was found that the exciton level at the excitation intensity just above the Ith was red-shifted by about 16 meV compared with the free exciton line (2.792 eV) under weak excitation condition. The energy difference between the exciton line and the lasing peak was about 19 meV at I = Ith and increased with increasing excitation intensity up to I = 8×Ith. This suggests that the stimulated emission occurs due to the inelastic exciton-exciton scattering process at this temperature.

U2 - 10.1109/68.281810

DO - 10.1109/68.281810

M3 - Article

VL - 6

SP - 505

EP - 508

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 4

ER -

Photoluminescence excitation spectroscopy of the dense exciton gas involved in the lasing transition in ZnSe epitaxial layers

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