Photoluminescence excitation spectroscopic studies of nitrogen doped ZnSe

G. D. Brownlie; Z Zhu; G. Horsburgh; T. Steele; P. J. Thompson; J. M. Wallace; K. A. Prior; B. C. Cavenett

doi:10.1016/0022-0248(95)00768-7

Photoluminescence excitation spectroscopic studies of nitrogen doped ZnSe

G. D. Brownlie, Z Zhu, G. Horsburgh, T. Steele, P. J. Thompson, J. M. Wallace, K. A. Prior, B. C. Cavenett

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Photoluminescence excitation spectroscopy (PLE) of nitrogen doped ZnSe epilayers is reported here for the first time. The dependence of the PLE spectra on the net acceptor concentration in ZnSe:N and the temperature has been investigated. A new radiative transition at 2.732 eV is revealed in highly doped ZnSe:N, and is attributed to a transition between the valence band and a new donor level with an ionisation energy of 88 meV. The effect of strain on the exciton spectra in undoped and N-doped layers is discussed.

Original language	English
Pages (from-to)	321-324
Number of pages	4
Journal	Journal of Crystal Growth
Volume	159
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(95)00768-7
Publication status	Published - Feb 1996

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title = "Photoluminescence excitation spectroscopic studies of nitrogen doped ZnSe",

abstract = "Photoluminescence excitation spectroscopy (PLE) of nitrogen doped ZnSe epilayers is reported here for the first time. The dependence of the PLE spectra on the net acceptor concentration in ZnSe:N and the temperature has been investigated. A new radiative transition at 2.732 eV is revealed in highly doped ZnSe:N, and is attributed to a transition between the valence band and a new donor level with an ionisation energy of 88 meV. The effect of strain on the exciton spectra in undoped and N-doped layers is discussed.",

author = "Brownlie, {G. D.} and Z Zhu and G. Horsburgh and T. Steele and Thompson, {P. J.} and Wallace, {J. M.} and Prior, {K. A.} and Cavenett, {B. C.}",

year = "1996",

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language = "English",

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journal = "Journal of Crystal Growth",

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T1 - Photoluminescence excitation spectroscopic studies of nitrogen doped ZnSe

AU - Brownlie, G. D.

AU - Zhu, Z

AU - Horsburgh, G.

AU - Steele, T.

AU - Thompson, P. J.

AU - Wallace, J. M.

AU - Prior, K. A.

AU - Cavenett, B. C.

PY - 1996/2

Y1 - 1996/2

N2 - Photoluminescence excitation spectroscopy (PLE) of nitrogen doped ZnSe epilayers is reported here for the first time. The dependence of the PLE spectra on the net acceptor concentration in ZnSe:N and the temperature has been investigated. A new radiative transition at 2.732 eV is revealed in highly doped ZnSe:N, and is attributed to a transition between the valence band and a new donor level with an ionisation energy of 88 meV. The effect of strain on the exciton spectra in undoped and N-doped layers is discussed.

AB - Photoluminescence excitation spectroscopy (PLE) of nitrogen doped ZnSe epilayers is reported here for the first time. The dependence of the PLE spectra on the net acceptor concentration in ZnSe:N and the temperature has been investigated. A new radiative transition at 2.732 eV is revealed in highly doped ZnSe:N, and is attributed to a transition between the valence band and a new donor level with an ionisation energy of 88 meV. The effect of strain on the exciton spectra in undoped and N-doped layers is discussed.

UR - http://www.scopus.com/inward/record.url?scp=0030562202&partnerID=8YFLogxK

U2 - 10.1016/0022-0248(95)00768-7

DO - 10.1016/0022-0248(95)00768-7

M3 - Article

SN - 0022-0248

VL - 159

SP - 321

EP - 324

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

Photoluminescence excitation spectroscopic studies of nitrogen doped ZnSe

Abstract

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