Photoluminescence decay measurements of n- and p-type doped ZnSe grown by molecular beam epitaxy

J. S. Massa; G. S. Buller; A. C. Walker; J. Simpson; K. A. Prior; B. C. Cavenett

doi:10.1063/1.111086

Photoluminescence decay measurements of n- and p-type doped ZnSe grown by molecular beam epitaxy

J. S. Massa, G. S. Buller, A. C. Walker, J. Simpson, K. A. Prior, B. C. Cavenett

School of Engineering & Physical Sciences

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29 Citations (Scopus)

Abstract

Time-resolved photoluminescence has been used to study carrier recombination in n- and p-type doped ZnSe at room temperature. A band-edge photoluminescence decay time of ~240 ps has been measured for heavily doped n-type material together with a relaxation time of a few microseconds for the associated deep-level emission. The band-edge photoluminescence decay time for p-type doped material was =11 ps and is indicative of a high level of nonradiative Shockley-Read recombination.

Original language	English
Pages (from-to)	589-591
Number of pages	3
Journal	Applied Physics Letters
Volume	64
Issue number	5
DOIs	https://doi.org/10.1063/1.111086
Publication status	Published - 1994

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abstract = "Time-resolved photoluminescence has been used to study carrier recombination in n- and p-type doped ZnSe at room temperature. A band-edge photoluminescence decay time of \textasciitilde{}240 ps has been measured for heavily doped n-type material together with a relaxation time of a few microseconds for the associated deep-level emission. The band-edge photoluminescence decay time for p-type doped material was =11 ps and is indicative of a high level of nonradiative Shockley-Read recombination.",

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AU - Massa, J. S.

AU - Buller, G. S.

AU - Walker, A. C.

AU - Simpson, J.

AU - Prior, K. A.

AU - Cavenett, B. C.

PY - 1994

Y1 - 1994

N2 - Time-resolved photoluminescence has been used to study carrier recombination in n- and p-type doped ZnSe at room temperature. A band-edge photoluminescence decay time of ~240 ps has been measured for heavily doped n-type material together with a relaxation time of a few microseconds for the associated deep-level emission. The band-edge photoluminescence decay time for p-type doped material was =11 ps and is indicative of a high level of nonradiative Shockley-Read recombination.

AB - Time-resolved photoluminescence has been used to study carrier recombination in n- and p-type doped ZnSe at room temperature. A band-edge photoluminescence decay time of ~240 ps has been measured for heavily doped n-type material together with a relaxation time of a few microseconds for the associated deep-level emission. The band-edge photoluminescence decay time for p-type doped material was =11 ps and is indicative of a high level of nonradiative Shockley-Read recombination.

UR - https://www.scopus.com/pages/publications/0027927310

U2 - 10.1063/1.111086

DO - 10.1063/1.111086

M3 - Article

SN - 0003-6951

VL - 64

SP - 589

EP - 591

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

ER -

Photoluminescence decay measurements of n- and p-type doped ZnSe grown by molecular beam epitaxy

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