Photoluminescence decay measurements of n- and p-type doped ZnSe grown by molecular beam epitaxy

J. S. Massa; G. S. Buller; A. C. Walker; J. Simpson; K. A. Prior; B. C. Cavenett

doi:10.1063/1.111086

Photoluminescence decay measurements of n- and p-type doped ZnSe grown by molecular beam epitaxy

J. S. Massa, G. S. Buller, A. C. Walker, J. Simpson, K. A. Prior, B. C. Cavenett

School of Engineering & Physical Sciences

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28 Citations (Scopus)

Abstract

Time-resolved photoluminescence has been used to study carrier recombination in n- and p-type doped ZnSe at room temperature. A band-edge photoluminescence decay time of ~240 ps has been measured for heavily doped n-type material together with a relaxation time of a few microseconds for the associated deep-level emission. The band-edge photoluminescence decay time for p-type doped material was =11 ps and is indicative of a high level of nonradiative Shockley-Read recombination.

Original language	English
Pages (from-to)	589-591
Number of pages	3
Journal	Applied Physics Letters
Volume	64
Issue number	5
DOIs	https://doi.org/10.1063/1.111086
Publication status	Published - 1994

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abstract = "Time-resolved photoluminescence has been used to study carrier recombination in n- and p-type doped ZnSe at room temperature. A band-edge photoluminescence decay time of ~240 ps has been measured for heavily doped n-type material together with a relaxation time of a few microseconds for the associated deep-level emission. The band-edge photoluminescence decay time for p-type doped material was =11 ps and is indicative of a high level of nonradiative Shockley-Read recombination.",

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AU - Simpson, J.

AU - Prior, K. A.

AU - Cavenett, B. C.

PY - 1994

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AB - Time-resolved photoluminescence has been used to study carrier recombination in n- and p-type doped ZnSe at room temperature. A band-edge photoluminescence decay time of ~240 ps has been measured for heavily doped n-type material together with a relaxation time of a few microseconds for the associated deep-level emission. The band-edge photoluminescence decay time for p-type doped material was =11 ps and is indicative of a high level of nonradiative Shockley-Read recombination.

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Photoluminescence decay measurements of n- and p-type doped ZnSe grown by molecular beam epitaxy

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