Photoluminescence decay measurements of n- and p-type doped ZnSe grown by molecular beam epitaxy

J. S. Massa, G. S. Buller, A. C. Walker, J. Simpson, K. A. Prior, B. C. Cavenett

Research output: Contribution to journalArticle

Abstract

Time-resolved photoluminescence has been used to study carrier recombination in n- and p-type doped ZnSe at room temperature. A band-edge photoluminescence decay time of ~240 ps has been measured for heavily doped n-type material together with a relaxation time of a few microseconds for the associated deep-level emission. The band-edge photoluminescence decay time for p-type doped material was =11 ps and is indicative of a high level of nonradiative Shockley-Read recombination.

Original languageEnglish
Pages (from-to)589-591
Number of pages3
JournalApplied Physics Letters
Volume64
Issue number5
DOIs
Publication statusPublished - 1994

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