Abstract
We have measured the free-carrier recombination time in polycrystalline bulk ZnSe to be in the range 7-14 ns at room temperature. We used an excite and probe technique with near-band-edge nanosecond laser pulses to measure the decay of induced free-carrier absorption. We estimate the free-carrier-pair absorption cross section to be in the range (3-6)×10-17 cm 2.
| Original language | English |
|---|---|
| Pages (from-to) | 2708-2710 |
| Number of pages | 3 |
| Journal | Journal of Applied Physics |
| Volume | 69 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 1991 |
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