Photogenerated carrier recombination time in bulk ZnSe

J. R. Milward; W. Ji; A. K. Kar; C. R. Pidgeon; B. S. Wherrett

doi:10.1063/1.348644

Photogenerated carrier recombination time in bulk ZnSe

J. R. Milward, W. Ji, A. K. Kar, C. R. Pidgeon, B. S. Wherrett

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

We have measured the free-carrier recombination time in polycrystalline bulk ZnSe to be in the range 7-14 ns at room temperature. We used an excite and probe technique with near-band-edge nanosecond laser pulses to measure the decay of induced free-carrier absorption. We estimate the free-carrier-pair absorption cross section to be in the range (3-6)×10^-17 cm ².

Original language	English
Pages (from-to)	2708-2710
Number of pages	3
Journal	Journal of Applied Physics
Volume	69
Issue number	4
DOIs	https://doi.org/10.1063/1.348644
Publication status	Published - 1991

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@article{fe7b55038149475296222be72504f2c7,

title = "Photogenerated carrier recombination time in bulk ZnSe",

abstract = "We have measured the free-carrier recombination time in polycrystalline bulk ZnSe to be in the range 7-14 ns at room temperature. We used an excite and probe technique with near-band-edge nanosecond laser pulses to measure the decay of induced free-carrier absorption. We estimate the free-carrier-pair absorption cross section to be in the range (3-6)×10-17 cm 2.",

author = "Milward, {J. R.} and W. Ji and Kar, {A. K.} and Pidgeon, {C. R.} and Wherrett, {B. S.}",

year = "1991",

doi = "10.1063/1.348644",

language = "English",

volume = "69",

pages = "2708--2710",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "4",

}

TY - JOUR

T1 - Photogenerated carrier recombination time in bulk ZnSe

AU - Milward, J. R.

AU - Ji, W.

AU - Kar, A. K.

AU - Pidgeon, C. R.

AU - Wherrett, B. S.

PY - 1991

Y1 - 1991

N2 - We have measured the free-carrier recombination time in polycrystalline bulk ZnSe to be in the range 7-14 ns at room temperature. We used an excite and probe technique with near-band-edge nanosecond laser pulses to measure the decay of induced free-carrier absorption. We estimate the free-carrier-pair absorption cross section to be in the range (3-6)×10-17 cm 2.

AB - We have measured the free-carrier recombination time in polycrystalline bulk ZnSe to be in the range 7-14 ns at room temperature. We used an excite and probe technique with near-band-edge nanosecond laser pulses to measure the decay of induced free-carrier absorption. We estimate the free-carrier-pair absorption cross section to be in the range (3-6)×10-17 cm 2.

UR - http://www.scopus.com/inward/record.url?scp=3843048854&partnerID=8YFLogxK

U2 - 10.1063/1.348644

DO - 10.1063/1.348644

M3 - Article

SN - 0021-8979

VL - 69

SP - 2708

EP - 2710

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

ER -

Photogenerated carrier recombination time in bulk ZnSe

Abstract

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