Photoelectrical properties of crystalline titanium dioxide thin films after thermo-annealing

R. Sathyamoorthy; P. Sudhagar; S. Chandramohan; K. P. Vijayakumar

doi:10.1002/crat.200610855

Photoelectrical properties of crystalline titanium dioxide thin films after thermo-annealing

R. Sathyamoorthy^*, P. Sudhagar, S. Chandramohan, K. P. Vijayakumar

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

This paper reports the photoelectrical properties of sol gel derived titanium dioxide (TiO₂) thin films annealed at different temperatures (425-900°C). The structure of the as-grown film was found to be amorphous and it transforms to crystalline upon annealing. The trap levels are studied by thermally stimulated current (TSC) measurements. A single trap level with activation energy of 1.5 eV was identified. The steady state and transient photocurrent was measured and the results are discussed on the basis of structural transformation. The photocurrent was found to be maximum for the films annealed at 425°C and further it decreases with annealing at higher temperatures. The photoconduction parameters such as carrier lifetime, lifetime decay constant and photosensitivity were calculated and the results are discussed as a function of annealing temperature.

Original language	English
Pages (from-to)	498-503
Number of pages	6
Journal	Crystal Research and Technology
Volume	42
Issue number	5
DOIs	https://doi.org/10.1002/crat.200610855
Publication status	Published - May 2007

Keywords

Photoconduction
Sol-gel
Thermally stimulated current
Titanium dioxide

ASJC Scopus subject areas

General Chemistry
General Materials Science
Condensed Matter Physics

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10.1002/crat.200610855

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title = "Photoelectrical properties of crystalline titanium dioxide thin films after thermo-annealing",

abstract = "This paper reports the photoelectrical properties of sol gel derived titanium dioxide (TiO2) thin films annealed at different temperatures (425-900°C). The structure of the as-grown film was found to be amorphous and it transforms to crystalline upon annealing. The trap levels are studied by thermally stimulated current (TSC) measurements. A single trap level with activation energy of 1.5 eV was identified. The steady state and transient photocurrent was measured and the results are discussed on the basis of structural transformation. The photocurrent was found to be maximum for the films annealed at 425°C and further it decreases with annealing at higher temperatures. The photoconduction parameters such as carrier lifetime, lifetime decay constant and photosensitivity were calculated and the results are discussed as a function of annealing temperature.",

keywords = "Photoconduction, Sol-gel, Thermally stimulated current, Titanium dioxide",

author = "R. Sathyamoorthy and P. Sudhagar and S. Chandramohan and Vijayakumar, {K. P.}",

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language = "English",

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TY - JOUR

T1 - Photoelectrical properties of crystalline titanium dioxide thin films after thermo-annealing

AU - Sathyamoorthy, R.

AU - Sudhagar, P.

AU - Chandramohan, S.

AU - Vijayakumar, K. P.

PY - 2007/5

Y1 - 2007/5

N2 - This paper reports the photoelectrical properties of sol gel derived titanium dioxide (TiO2) thin films annealed at different temperatures (425-900°C). The structure of the as-grown film was found to be amorphous and it transforms to crystalline upon annealing. The trap levels are studied by thermally stimulated current (TSC) measurements. A single trap level with activation energy of 1.5 eV was identified. The steady state and transient photocurrent was measured and the results are discussed on the basis of structural transformation. The photocurrent was found to be maximum for the films annealed at 425°C and further it decreases with annealing at higher temperatures. The photoconduction parameters such as carrier lifetime, lifetime decay constant and photosensitivity were calculated and the results are discussed as a function of annealing temperature.

AB - This paper reports the photoelectrical properties of sol gel derived titanium dioxide (TiO2) thin films annealed at different temperatures (425-900°C). The structure of the as-grown film was found to be amorphous and it transforms to crystalline upon annealing. The trap levels are studied by thermally stimulated current (TSC) measurements. A single trap level with activation energy of 1.5 eV was identified. The steady state and transient photocurrent was measured and the results are discussed on the basis of structural transformation. The photocurrent was found to be maximum for the films annealed at 425°C and further it decreases with annealing at higher temperatures. The photoconduction parameters such as carrier lifetime, lifetime decay constant and photosensitivity were calculated and the results are discussed as a function of annealing temperature.

KW - Photoconduction

KW - Sol-gel

KW - Thermally stimulated current

KW - Titanium dioxide

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DO - 10.1002/crat.200610855

M3 - Article

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VL - 42

SP - 498

EP - 503

JO - Crystal Research and Technology

JF - Crystal Research and Technology

IS - 5

ER -

Photoelectrical properties of crystalline titanium dioxide thin films after thermo-annealing

Abstract

Keywords

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