Photoconductivity of Be-doped GaAs under intense terahertz radiation

R. A. Lewis; I. V. Bradley; M. Henini

doi:10.1016/S0038-1098(02)00084-4

Photoconductivity of Be-doped GaAs under intense terahertz radiation

R. A. Lewis
, I. V. Bradley
, M. Henini

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

Lyman transitions of the Be acceptor in GaAs have been investigated under intense radiation generated by a free electron laser. Photoconductivity was found to be a more sensitive method than transmission for detecting the transitions. Three regimes of photoconductive response were distinguished: at high intensity, the signal saturates; at intermediate intensity, it is proportional to intensity; at low intensity, it is background limited. Spectra were obtained by wavelength scanning and showed excellent reproducibility from run to run. With increasing radiation intensity, the D and C lines, being transitions from the 1s_3/2(G₈⁺) ground state to the 2p_5/2(G₈^-) and 2p_5/2(G₇^-) excited states, respectively, exhibit a pronounced splitting and broadening of components. This behavior is attributed to thermal stress induced by localized heating. © 2002 Elsevier Science Ltd. All rights reserved.

Original language	English
Pages (from-to)	223-228
Number of pages	6
Journal	Solid State Communications
Volume	122
Issue number	3-4
DOIs	https://doi.org/10.1016/S0038-1098(02)00084-4
Publication status	Published - Apr 2002

Keywords

A. Semiconductors
C. Impurities in semiconductors
D. Electronic states (localized)
E. Light absorption and reflection

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10.1016/S0038-1098(02)00084-4

Cite this

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title = "Photoconductivity of Be-doped GaAs under intense terahertz radiation",

abstract = "Lyman transitions of the Be acceptor in GaAs have been investigated under intense radiation generated by a free electron laser. Photoconductivity was found to be a more sensitive method than transmission for detecting the transitions. Three regimes of photoconductive response were distinguished: at high intensity, the signal saturates; at intermediate intensity, it is proportional to intensity; at low intensity, it is background limited. Spectra were obtained by wavelength scanning and showed excellent reproducibility from run to run. With increasing radiation intensity, the D and C lines, being transitions from the 1s3/2(G8+) ground state to the 2p5/2(G8-) and 2p5/2(G7-) excited states, respectively, exhibit a pronounced splitting and broadening of components. This behavior is attributed to thermal stress induced by localized heating. {\textcopyright} 2002 Elsevier Science Ltd. All rights reserved.",

keywords = "A. Semiconductors, C. Impurities in semiconductors, D. Electronic states (localized), E. Light absorption and reflection",

author = "Lewis, \{R. A.\} and Bradley, \{I. V.\} and M. Henini",

year = "2002",

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doi = "10.1016/S0038-1098(02)00084-4",

language = "English",

volume = "122",

pages = "223--228",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd",

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TY - JOUR

T1 - Photoconductivity of Be-doped GaAs under intense terahertz radiation

AU - Lewis, R. A.

AU - Bradley, I. V.

AU - Henini, M.

PY - 2002/4

Y1 - 2002/4

N2 - Lyman transitions of the Be acceptor in GaAs have been investigated under intense radiation generated by a free electron laser. Photoconductivity was found to be a more sensitive method than transmission for detecting the transitions. Three regimes of photoconductive response were distinguished: at high intensity, the signal saturates; at intermediate intensity, it is proportional to intensity; at low intensity, it is background limited. Spectra were obtained by wavelength scanning and showed excellent reproducibility from run to run. With increasing radiation intensity, the D and C lines, being transitions from the 1s3/2(G8+) ground state to the 2p5/2(G8-) and 2p5/2(G7-) excited states, respectively, exhibit a pronounced splitting and broadening of components. This behavior is attributed to thermal stress induced by localized heating. © 2002 Elsevier Science Ltd. All rights reserved.

AB - Lyman transitions of the Be acceptor in GaAs have been investigated under intense radiation generated by a free electron laser. Photoconductivity was found to be a more sensitive method than transmission for detecting the transitions. Three regimes of photoconductive response were distinguished: at high intensity, the signal saturates; at intermediate intensity, it is proportional to intensity; at low intensity, it is background limited. Spectra were obtained by wavelength scanning and showed excellent reproducibility from run to run. With increasing radiation intensity, the D and C lines, being transitions from the 1s3/2(G8+) ground state to the 2p5/2(G8-) and 2p5/2(G7-) excited states, respectively, exhibit a pronounced splitting and broadening of components. This behavior is attributed to thermal stress induced by localized heating. © 2002 Elsevier Science Ltd. All rights reserved.

KW - A. Semiconductors

KW - C. Impurities in semiconductors

KW - D. Electronic states (localized)

KW - E. Light absorption and reflection

UR - https://www.scopus.com/pages/publications/0036530706

U2 - 10.1016/S0038-1098(02)00084-4

DO - 10.1016/S0038-1098(02)00084-4

M3 - Article

SN - 0038-1098

VL - 122

SP - 223

EP - 228

JO - Solid State Communications

JF - Solid State Communications

IS - 3-4

ER -

Photoconductivity of Be-doped GaAs under intense terahertz radiation

Abstract

Keywords

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