Photoconductivity of Be-doped GaAs under intense terahertz radiation

R. A. Lewis, I. V. Bradley, M. Henini

    Research output: Contribution to journalArticle

    Abstract

    Lyman transitions of the Be acceptor in GaAs have been investigated under intense radiation generated by a free electron laser. Photoconductivity was found to be a more sensitive method than transmission for detecting the transitions. Three regimes of photoconductive response were distinguished: at high intensity, the signal saturates; at intermediate intensity, it is proportional to intensity; at low intensity, it is background limited. Spectra were obtained by wavelength scanning and showed excellent reproducibility from run to run. With increasing radiation intensity, the D and C lines, being transitions from the 1s3/2(G8+) ground state to the 2p5/2(G8-) and 2p5/2(G7-) excited states, respectively, exhibit a pronounced splitting and broadening of components. This behavior is attributed to thermal stress induced by localized heating. © 2002 Elsevier Science Ltd. All rights reserved.

    Original languageEnglish
    Pages (from-to)223-228
    Number of pages6
    JournalSolid State Communications
    Volume122
    Issue number3-4
    DOIs
    Publication statusPublished - Apr 2002

    Fingerprint

    photoconductivity
    radiation
    D lines
    thermal stresses
    free electron lasers
    radiant flux density
    heating
    scanning
    ground state
    wavelengths
    excitation

    Keywords

    • A. Semiconductors
    • C. Impurities in semiconductors
    • D. Electronic states (localized)
    • E. Light absorption and reflection

    Cite this

    Lewis, R. A. ; Bradley, I. V. ; Henini, M. / Photoconductivity of Be-doped GaAs under intense terahertz radiation. In: Solid State Communications. 2002 ; Vol. 122, No. 3-4. pp. 223-228.
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    abstract = "Lyman transitions of the Be acceptor in GaAs have been investigated under intense radiation generated by a free electron laser. Photoconductivity was found to be a more sensitive method than transmission for detecting the transitions. Three regimes of photoconductive response were distinguished: at high intensity, the signal saturates; at intermediate intensity, it is proportional to intensity; at low intensity, it is background limited. Spectra were obtained by wavelength scanning and showed excellent reproducibility from run to run. With increasing radiation intensity, the D and C lines, being transitions from the 1s3/2(G8+) ground state to the 2p5/2(G8-) and 2p5/2(G7-) excited states, respectively, exhibit a pronounced splitting and broadening of components. This behavior is attributed to thermal stress induced by localized heating. {\circledC} 2002 Elsevier Science Ltd. All rights reserved.",
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    Photoconductivity of Be-doped GaAs under intense terahertz radiation. / Lewis, R. A.; Bradley, I. V.; Henini, M.

    In: Solid State Communications, Vol. 122, No. 3-4, 04.2002, p. 223-228.

    Research output: Contribution to journalArticle

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    AU - Lewis, R. A.

    AU - Bradley, I. V.

    AU - Henini, M.

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    N2 - Lyman transitions of the Be acceptor in GaAs have been investigated under intense radiation generated by a free electron laser. Photoconductivity was found to be a more sensitive method than transmission for detecting the transitions. Three regimes of photoconductive response were distinguished: at high intensity, the signal saturates; at intermediate intensity, it is proportional to intensity; at low intensity, it is background limited. Spectra were obtained by wavelength scanning and showed excellent reproducibility from run to run. With increasing radiation intensity, the D and C lines, being transitions from the 1s3/2(G8+) ground state to the 2p5/2(G8-) and 2p5/2(G7-) excited states, respectively, exhibit a pronounced splitting and broadening of components. This behavior is attributed to thermal stress induced by localized heating. © 2002 Elsevier Science Ltd. All rights reserved.

    AB - Lyman transitions of the Be acceptor in GaAs have been investigated under intense radiation generated by a free electron laser. Photoconductivity was found to be a more sensitive method than transmission for detecting the transitions. Three regimes of photoconductive response were distinguished: at high intensity, the signal saturates; at intermediate intensity, it is proportional to intensity; at low intensity, it is background limited. Spectra were obtained by wavelength scanning and showed excellent reproducibility from run to run. With increasing radiation intensity, the D and C lines, being transitions from the 1s3/2(G8+) ground state to the 2p5/2(G8-) and 2p5/2(G7-) excited states, respectively, exhibit a pronounced splitting and broadening of components. This behavior is attributed to thermal stress induced by localized heating. © 2002 Elsevier Science Ltd. All rights reserved.

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