Abstract
Lyman transitions of the Be acceptor in GaAs have been investigated under intense radiation generated by a free electron laser. Photoconductivity was found to be a more sensitive method than transmission for detecting the transitions. Three regimes of photoconductive response were distinguished: at high intensity, the signal saturates; at intermediate intensity, it is proportional to intensity; at low intensity, it is background limited. Spectra were obtained by wavelength scanning and showed excellent reproducibility from run to run. With increasing radiation intensity, the D and C lines, being transitions from the 1s3/2(G8+) ground state to the 2p5/2(G8-) and 2p5/2(G7-) excited states, respectively, exhibit a pronounced splitting and broadening of components. This behavior is attributed to thermal stress induced by localized heating. © 2002 Elsevier Science Ltd. All rights reserved.
Original language | English |
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Pages (from-to) | 223-228 |
Number of pages | 6 |
Journal | Solid State Communications |
Volume | 122 |
Issue number | 3-4 |
DOIs | |
Publication status | Published - Apr 2002 |
Keywords
- A. Semiconductors
- C. Impurities in semiconductors
- D. Electronic states (localized)
- E. Light absorption and reflection