Photoconductivity of Be-doped GaAs under intense terahertz radiation

R. A. Lewis, I. V. Bradley, M. Henini

    Research output: Contribution to journalArticle

    14 Citations (Scopus)

    Abstract

    Lyman transitions of the Be acceptor in GaAs have been investigated under intense radiation generated by a free electron laser. Photoconductivity was found to be a more sensitive method than transmission for detecting the transitions. Three regimes of photoconductive response were distinguished: at high intensity, the signal saturates; at intermediate intensity, it is proportional to intensity; at low intensity, it is background limited. Spectra were obtained by wavelength scanning and showed excellent reproducibility from run to run. With increasing radiation intensity, the D and C lines, being transitions from the 1s3/2(G8+) ground state to the 2p5/2(G8-) and 2p5/2(G7-) excited states, respectively, exhibit a pronounced splitting and broadening of components. This behavior is attributed to thermal stress induced by localized heating. © 2002 Elsevier Science Ltd. All rights reserved.

    Original languageEnglish
    Pages (from-to)223-228
    Number of pages6
    JournalSolid State Communications
    Volume122
    Issue number3-4
    DOIs
    Publication statusPublished - Apr 2002

    Keywords

    • A. Semiconductors
    • C. Impurities in semiconductors
    • D. Electronic states (localized)
    • E. Light absorption and reflection

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