Photoassisted molecular beam epitaxial growth of ZnSe under high UV irradiances

J. Simpson; S. J A Adams; J. M. Wallace; K. A. Prior; B. C. Cavenett

doi:10.1088/0268-1242/7/4/003

Photoassisted molecular beam epitaxial growth of ZnSe under high UV irradiances

J. Simpson, S. J A Adams, J. M. Wallace, K. A. Prior, B. C. Cavenett

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

ZnSe has been deposited on (100) GaAs by molecular beam epitaxy under a UV irradiance of 4 W cm^-2. At this level, the ZnSe growth rate can be severely reduced or stopped altogether. We show for the first time that the reduction in growth rate is a strong function of layer thickness for epilayers less than approximately 2000 A thick. The growth rate under laser irradiation is found to be directly proportional to the Se flux, demonstrating that Se is the minority surface species even under high VI-II flux ratios. Furthermore we present observations indicating that the electron stimulated desorption of Se by RHEED beams and the photostimulated desorption are both due to the accumulation of photoinduced holes at the growth surface.

Original language	English
Pages (from-to)	460-463
Number of pages	4
Journal	Semiconductor Science and Technology
Volume	7
Issue number	4
DOIs	https://doi.org/10.1088/0268-1242/7/4/003
Publication status	Published - Apr 1992

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title = "Photoassisted molecular beam epitaxial growth of ZnSe under high UV irradiances",

abstract = "ZnSe has been deposited on (100) GaAs by molecular beam epitaxy under a UV irradiance of 4 W cm-2. At this level, the ZnSe growth rate can be severely reduced or stopped altogether. We show for the first time that the reduction in growth rate is a strong function of layer thickness for epilayers less than approximately 2000 A thick. The growth rate under laser irradiation is found to be directly proportional to the Se flux, demonstrating that Se is the minority surface species even under high VI-II flux ratios. Furthermore we present observations indicating that the electron stimulated desorption of Se by RHEED beams and the photostimulated desorption are both due to the accumulation of photoinduced holes at the growth surface.",

author = "J. Simpson and Adams, {S. J A} and Wallace, {J. M.} and Prior, {K. A.} and Cavenett, {B. C.}",

year = "1992",

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T1 - Photoassisted molecular beam epitaxial growth of ZnSe under high UV irradiances

AU - Simpson, J.

AU - Adams, S. J A

AU - Wallace, J. M.

AU - Prior, K. A.

AU - Cavenett, B. C.

PY - 1992/4

Y1 - 1992/4

N2 - ZnSe has been deposited on (100) GaAs by molecular beam epitaxy under a UV irradiance of 4 W cm-2. At this level, the ZnSe growth rate can be severely reduced or stopped altogether. We show for the first time that the reduction in growth rate is a strong function of layer thickness for epilayers less than approximately 2000 A thick. The growth rate under laser irradiation is found to be directly proportional to the Se flux, demonstrating that Se is the minority surface species even under high VI-II flux ratios. Furthermore we present observations indicating that the electron stimulated desorption of Se by RHEED beams and the photostimulated desorption are both due to the accumulation of photoinduced holes at the growth surface.

AB - ZnSe has been deposited on (100) GaAs by molecular beam epitaxy under a UV irradiance of 4 W cm-2. At this level, the ZnSe growth rate can be severely reduced or stopped altogether. We show for the first time that the reduction in growth rate is a strong function of layer thickness for epilayers less than approximately 2000 A thick. The growth rate under laser irradiation is found to be directly proportional to the Se flux, demonstrating that Se is the minority surface species even under high VI-II flux ratios. Furthermore we present observations indicating that the electron stimulated desorption of Se by RHEED beams and the photostimulated desorption are both due to the accumulation of photoinduced holes at the growth surface.

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U2 - 10.1088/0268-1242/7/4/003

DO - 10.1088/0268-1242/7/4/003

M3 - Article

SN - 0268-1242

VL - 7

SP - 460

EP - 463

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 4

ER -

Photoassisted molecular beam epitaxial growth of ZnSe under high UV irradiances

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