Photo-oxidation of amorphous silicon-carbon alloys and its use in field effect transistors

J. I B  Wilson; Asif Qayyum; Saad Al-Sabbagh; Michael Jubber; Philip John

Photo-oxidation of amorphous silicon-carbon alloys and its use in field effect transistors

J. I B Wilson, Asif Qayyum, Saad Al-Sabbagh, Michael Jubber, Philip John

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Hydrogenated amorphous silicon-carbon thin-films deposited by rf plasma deposition from silane and propane are photo-oxidised by UV illumination at room temperature in air. The process has high spatial resolution and reduces the electrical conductivity of the alloys to the extent that they can be used as gate insulators in field effect transistors. © 1989.

Original language	English
Pages (from-to)	84-86
Number of pages	3
Journal	Journal of Non-Crystalline Solids
Volume	115
Issue number	1-3
Publication status	Published - 3 Dec 1989

Cite this

@article{4a8c4cb84bcf4987bd00b93142f3e510,

title = "Photo-oxidation of amorphous silicon-carbon alloys and its use in field effect transistors",

abstract = "Hydrogenated amorphous silicon-carbon thin-films deposited by rf plasma deposition from silane and propane are photo-oxidised by UV illumination at room temperature in air. The process has high spatial resolution and reduces the electrical conductivity of the alloys to the extent that they can be used as gate insulators in field effect transistors. {\textcopyright} 1989.",

author = "Wilson, {J. I B} and Asif Qayyum and Saad Al-Sabbagh and Michael Jubber and Philip John",

year = "1989",

month = dec,

day = "3",

language = "English",

volume = "115",

pages = "84--86",

journal = "Journal of Non-Crystalline Solids",

issn = "0022-3093",

publisher = "Elsevier",

number = "1-3",

}

TY - JOUR

T1 - Photo-oxidation of amorphous silicon-carbon alloys and its use in field effect transistors

AU - Wilson, J. I B

AU - Qayyum, Asif

AU - Al-Sabbagh, Saad

AU - Jubber, Michael

AU - John, Philip

PY - 1989/12/3

Y1 - 1989/12/3

N2 - Hydrogenated amorphous silicon-carbon thin-films deposited by rf plasma deposition from silane and propane are photo-oxidised by UV illumination at room temperature in air. The process has high spatial resolution and reduces the electrical conductivity of the alloys to the extent that they can be used as gate insulators in field effect transistors. © 1989.

AB - Hydrogenated amorphous silicon-carbon thin-films deposited by rf plasma deposition from silane and propane are photo-oxidised by UV illumination at room temperature in air. The process has high spatial resolution and reduces the electrical conductivity of the alloys to the extent that they can be used as gate insulators in field effect transistors. © 1989.

UR - http://www.scopus.com/inward/record.url?scp=0024809467&partnerID=8YFLogxK

M3 - Article

SN - 0022-3093

VL - 115

SP - 84

EP - 86

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - 1-3

ER -

Photo-oxidation of amorphous silicon-carbon alloys and its use in field effect transistors

Abstract

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