Hydrogenated amorphous silicon-carbon thin-films deposited by rf plasma deposition from silane and propane are photo-oxidised by UV illumination at room temperature in air. The process has high spatial resolution and reduces the electrical conductivity of the alloys to the extent that they can be used as gate insulators in field effect transistors. © 1989.
|Number of pages||3|
|Journal||Journal of Non-Crystalline Solids|
|Publication status||Published - 3 Dec 1989|