Photo-oxidation of amorphous silicon-carbon alloys and its use in field effect transistors

J. I B Wilson, Asif Qayyum, Saad Al-Sabbagh, Michael Jubber, Philip John

Research output: Contribution to journalArticle

Abstract

Hydrogenated amorphous silicon-carbon thin-films deposited by rf plasma deposition from silane and propane are photo-oxidised by UV illumination at room temperature in air. The process has high spatial resolution and reduces the electrical conductivity of the alloys to the extent that they can be used as gate insulators in field effect transistors. © 1989.

Original languageEnglish
Pages (from-to)84-86
Number of pages3
JournalJournal of Non-Crystalline Solids
Volume115
Issue number1-3
Publication statusPublished - 3 Dec 1989

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