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Photo-oxidation of a-Si: C:H studied by in situ XPS
F. Ibrahim, J. I B Wilson,
P. John
School of Engineering & Physical Sciences
Research output
:
Contribution to journal
›
Article
›
peer-review
8
Citations (Scopus)
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INIS
oxidation
100%
xps
100%
illumination
100%
oxygen
66%
growth
33%
roots
33%
voids
33%
temperature range 0273-0400 k
33%
transport
33%
diffusion
33%
carbon
33%
films
33%
silicon oxides
33%
silanes
33%
interstitials
33%
oxidants
33%
propane
33%
Chemistry
Photooxidation
100%
Illumination
100%
Liquid Film
33%
Silane
33%
Void (Structures)
33%
Silicon Oxide
33%
Ambient Reaction Temperature
33%
Material Science
Oxidation Reaction
100%
Silane
50%
Film
50%
Silicon
50%
Oxide Compound
50%
Oxidant
50%
Immunology and Microbiology
Illumination
100%
Photooxidation
100%
Room Temperature
33%