TY - JOUR
T1 - Photo-oxidation of a-Si
T2 - C:H studied by in situ XPS
AU - Ibrahim, F.
AU - Wilson, J. I B
AU - John, P.
PY - 1995/11
Y1 - 1995/11
N2 - Room-temperature photostructural changes induced in high-carbon a-Si:C:H films prepared from silane and propane were monitored by examination of the behaviour of the Si 2p, C 1s and O 1s XPS. Silicon oxide is produced by UV illumination in oxygen, although interstitial oxygen does not support the process, and C-Si, C-C and C-H bonds are unaffected. The growth rate is a log function of the illumination period, consistent with the high microvoid content of the most easily oxidized material. Oxidant can move through the void structure to the site of oxidation, instead of the more usual diffusion-limited transport which would give a square root dependence on illumination period. © 1995 Elsevier Science B.V. All rights reserved.
AB - Room-temperature photostructural changes induced in high-carbon a-Si:C:H films prepared from silane and propane were monitored by examination of the behaviour of the Si 2p, C 1s and O 1s XPS. Silicon oxide is produced by UV illumination in oxygen, although interstitial oxygen does not support the process, and C-Si, C-C and C-H bonds are unaffected. The growth rate is a log function of the illumination period, consistent with the high microvoid content of the most easily oxidized material. Oxidant can move through the void structure to the site of oxidation, instead of the more usual diffusion-limited transport which would give a square root dependence on illumination period. © 1995 Elsevier Science B.V. All rights reserved.
UR - http://www.scopus.com/inward/record.url?scp=33744662367&partnerID=8YFLogxK
U2 - 10.1016/0022-3093(95)00312-6
DO - 10.1016/0022-3093(95)00312-6
M3 - Article
SN - 0022-3093
VL - 191
SP - 200
EP - 204
JO - Journal of Non-Crystalline Solids
JF - Journal of Non-Crystalline Solids
IS - 1-2
ER -