Photo-oxidation of a-Si: C:H studied by in situ XPS

F. Ibrahim, J. I B Wilson, P. John

Research output: Contribution to journalArticle

Abstract

Room-temperature photostructural changes induced in high-carbon a-Si:C:H films prepared from silane and propane were monitored by examination of the behaviour of the Si 2p, C 1s and O 1s XPS. Silicon oxide is produced by UV illumination in oxygen, although interstitial oxygen does not support the process, and C-Si, C-C and C-H bonds are unaffected. The growth rate is a log function of the illumination period, consistent with the high microvoid content of the most easily oxidized material. Oxidant can move through the void structure to the site of oxidation, instead of the more usual diffusion-limited transport which would give a square root dependence on illumination period. © 1995 Elsevier Science B.V. All rights reserved.

Original languageEnglish
Pages (from-to)200-204
Number of pages5
JournalJournal of Non-Crystalline Solids
Volume191
Issue number1-2
DOIs
Publication statusPublished - Nov 1995

Fingerprint Dive into the research topics of 'Photo-oxidation of a-Si: C:H studied by in situ XPS'. Together they form a unique fingerprint.

  • Cite this