Photo-oxidation of a-Si: C : H films

F. Ibrahim, J. I B Wilson, P. John

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


Glow-discharge a-Si1-x:Cx:H deposited from silane and propane have been studied in the high carbon concentration range (x~0.5 to ~0.7, according to XPS) in view of their interesting photo-oxidation property. These carbon-rich films have three dominant microstructures: diamond-like, porous and polymer-like, at increasing carbon composition. The basic polymeric unit is CH2, and the porosity is due to the SiCH3 bond terminating groups. The ease of photo-oxidation, as measured by the depth of the oxide after periods of UV illumination, correlates with the porosity of these films, rather than a simple correlation with carbon content. © 1993.

Original languageEnglish
Pages (from-to)1051-1054
Number of pages4
JournalJournal of Non-Crystalline Solids
Issue numberPART 2
Publication statusPublished - 2 Dec 1993


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